FRANTA, Daniel, Martin HRDLIČKA, David NEČAS, Miloslav FRUMAR, Ivan OHLÍDAL and Martin PAVLIŠTA. Optical characterization of phase changing Ge2Sb2Te5 chalcogenide films. physica status solidi (c). Weinheim: WILEY-VCH Verlag GmbH, 2008, vol. 5, No 5, p. 1324-1327. ISSN 1610-1634.
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Basic information
Original name Optical characterization of phase changing Ge2Sb2Te5 chalcogenide films
Name in Czech Optická charakterizace fázově měnitelných Ge2Sb2Te5 chalkogenidových filmů
Authors FRANTA, Daniel (203 Czech Republic, guarantor), Martin HRDLIČKA (203 Czech Republic), David NEČAS (203 Czech Republic), Miloslav FRUMAR (203 Czech Republic), Ivan OHLÍDAL (203 Czech Republic) and Martin PAVLIŠTA (203 Czech Republic).
Edition physica status solidi (c), Weinheim, WILEY-VCH Verlag GmbH, 2008, 1610-1634.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher Germany
Confidentiality degree is not subject to a state or trade secret
RIV identification code RIV/00216224:14310/08:00025067
Organization unit Faculty of Science
UT WoS 000256862500078
Keywords in English thin-films; thermal-stability; dispersion model; rough surfaces; optical constants
Tags Dispersion model, optical constants, rough surfaces, thermal-stability, THIN-FILMS
Tags International impact, Reviewed
Changed by Changed by: Mgr. Daniel Franta, Ph.D., učo 2000. Changed: 3/7/2009 09:37.
Abstract
The variable angle spectroscopic ellipsometry and spectroscopic reflectometry is used for the optical characterization of the as-deposited and annealed Ge2Sb2Te5 (GST) films. The dispersion model of the GST films is based on the parameterization of the density of electronic states. As a consequence of annealing, roughness of the upper boundaries of the GST films originates. This annealing also causes the evident redistribution of the density of electronic states from the higher energies to lower energies. The roughening and redistribution of the electrons are explained by means of the phase change of the GST films from amorphous to polycrystalline structure. This phase change is accompanied by changing the conductivity of the films that was proved by introducing the terms of the free carriers in the dispersion model of the CST films.
Abstract (in Czech)
The variable angle spectroscopic ellipsometry and spectroscopic reflectometry is used for the optical characterization of the as-deposited and annealed Ge2Sb2Te5 (GST) films. The dispersion model of the GST films is based on the parameterization of the density of electronic states. As a consequence of annealing, roughness of the upper boundaries of the GST films originates. This annealing also causes the evident redistribution of the density of electronic states from the higher energies to lower energies. The roughening and redistribution of the electrons are explained by means of the phase change of the GST films from amorphous to polycrystalline structure. This phase change is accompanied by changing the conductivity of the films that was proved by introducing the terms of the free carriers in the dispersion model of the CST films.
Links
GA203/05/0524, research and development projectName: Fotonická skla a amorfní vrstvy
Investor: Czech Science Foundation, Photonics glasses and amorphous films
MSM0021622411, plan (intention)Name: Studium a aplikace plazmochemických reakcí v neizotermickém nízkoteplotním plazmatu a jeho interakcí s povrchem pevných látek
Investor: Ministry of Education, Youth and Sports of the CR, Study and application of plasma chemical reactions in non-isothermic low temperature plasma and its interaction with solid surface
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