Optical characterization of phase changing Ge2Sb2Te5 chalcogenide films

FRANTA, Daniel, Martin HRDLIČKA, David NEČAS, Miloslav FRUMAR, Ivan OHLÍDAL and Martin PAVLIŠTA. Optical characterization of phase changing Ge2Sb2Te5 chalcogenide films. physica status solidi (c). Weinheim: WILEY-VCH Verlag GmbH, 2008, vol. 5, No 5, p. 1324-1327. ISSN 1610-1634.

Basic information

Original name

Optical characterization of phase changing Ge2Sb2Te5 chalcogenide films

Name in Czech

Optická charakterizace fázově měnitelných Ge2Sb2Te5 chalkogenidových filmů

Authors

FRANTA, Daniel (203 Czech Republic, guarantor), Martin HRDLIČKA (203 Czech Republic), David NEČAS (203 Czech Republic), Miloslav FRUMAR (203 Czech Republic), Ivan OHLÍDAL (203 Czech Republic) and Martin PAVLIŠTA (203 Czech Republic)

Edition

physica status solidi (c), Weinheim, WILEY-VCH Verlag GmbH, 2008, 1610-1634

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Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

Germany

Confidentiality degree

není předmětem státního či obchodního tajemství

RIV identification code

RIV/00216224:14310/08:00025067

Organization unit

Faculty of Science

UT WoS

000256862500078

Keywords in English

thin-films; thermal-stability; dispersion model; rough surfaces; optical constants

Tags

Dispersion model, optical constants, rough surfaces, thermal-stability, THIN-FILMS

Tags

International impact, Reviewed

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Abstract

V originále

The variable angle spectroscopic ellipsometry and spectroscopic reflectometry is used for the optical characterization of the as-deposited and annealed Ge2Sb2Te5 (GST) films. The dispersion model of the GST films is based on the parameterization of the density of electronic states. As a consequence of annealing, roughness of the upper boundaries of the GST films originates. This annealing also causes the evident redistribution of the density of electronic states from the higher energies to lower energies. The roughening and redistribution of the electrons are explained by means of the phase change of the GST films from amorphous to polycrystalline structure. This phase change is accompanied by changing the conductivity of the films that was proved by introducing the terms of the free carriers in the dispersion model of the CST films.

In Czech

The variable angle spectroscopic ellipsometry and spectroscopic reflectometry is used for the optical characterization of the as-deposited and annealed Ge2Sb2Te5 (GST) films. The dispersion model of the GST films is based on the parameterization of the density of electronic states. As a consequence of annealing, roughness of the upper boundaries of the GST films originates. This annealing also causes the evident redistribution of the density of electronic states from the higher energies to lower energies. The roughening and redistribution of the electrons are explained by means of the phase change of the GST films from amorphous to polycrystalline structure. This phase change is accompanied by changing the conductivity of the films that was proved by introducing the terms of the free carriers in the dispersion model of the CST films.

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Links

GA203/05/0524, research and development project	Name: Fotonická skla a amorfní vrstvy Investor: Czech Science Foundation, Photonics glasses and amorphous films
MSM0021622411, plan (intention)	Name: Studium a aplikace plazmochemických reakcí v neizotermickém nízkoteplotním plazmatu a jeho interakcí s povrchem pevných látek Investor: Ministry of Education, Youth and Sports of the CR, Study and application of plasma chemical reactions in non-isothermic low temperature plasma and its interaction with solid surface