Detailed Information on Publication Record
2008
Optical Characterization of Ultrananocrystalline Diamond Films
FRANTA, Daniel, Lenka ZAJÍČKOVÁ, Monika KARÁSKOVÁ, Ondřej JAŠEK, David NEČAS et. al.Basic information
Original name
Optical Characterization of Ultrananocrystalline Diamond Films
Name in Czech
Optická charakterizace ultrananokrystalických diamantových vrstev
Authors
FRANTA, Daniel (203 Czech Republic, guarantor), Lenka ZAJÍČKOVÁ (203 Czech Republic), Monika KARÁSKOVÁ (203 Czech Republic), Ondřej JAŠEK (203 Czech Republic), David NEČAS (203 Czech Republic), Petr KLAPETEK (203 Czech Republic) and Miroslav VALTR (203 Czech Republic)
Edition
Diamond and Related Materials, New York, Elsevier, 2008, 0925-9635
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10302 Condensed matter physics
Country of publisher
United States of America
Confidentiality degree
není předmětem státního či obchodního tajemství
Impact factor
Impact factor: 2.092
RIV identification code
RIV/00216224:14310/08:00024370
Organization unit
Faculty of Science
UT WoS
000259598300048
Keywords in English
Nanocrystalline carbon; Optical properties characterization; Band structure
Tags
International impact, Reviewed
Změněno: 24/6/2009 16:12, Mgr. Ondřej Jašek, Ph.D.
V originále
Optical properties of the ultrananocrystalline diamond films were studied by multisample method based on the combination of variable angle spectroscopic ellipsometry and spectroscopic reflectometry applied in the range 0.6-6.5 eV. The films were deposited by PECVD in a conventional bell jar (ASTeX type) reactor using dual frequency discharge, microwave cavity plasma and radio frequency plasma inducing dc self-bias at a substrate holder. The optical model of the samples included a surface roughness described by the Rayleigh-Rice theory and a refractive index profile in which Drude approximation was used. The results conformed with the present understanding of the polycrystalline diamond growth on the silicon substrate because the existence of silicon carbide and amorphous hydrogenated carbon film between the silicon substrate and nucleation layer was proved.
In Czech
Optical properties of the ultrananocrystalline diamond films were studied by multisample method based on the combination of variable angle spectroscopic ellipsometry and spectroscopic reflectometry applied in the range 0.6-6.5 eV. The films were deposited by PECVD in a conventional bell jar (ASTeX type) reactor using dual frequency discharge, microwave cavity plasma and radio frequency plasma inducing dc self-bias at a substrate holder. The optical model of the samples included a surface roughness described by the Rayleigh-Rice theory and a refractive index profile in which Drude approximation was used. The results conformed with the present understanding of the polycrystalline diamond growth on the silicon substrate because the existence of silicon carbide and amorphous hydrogenated carbon film between the silicon substrate and nucleation layer was proved.
Links
| GA202/05/0607, research and development project |
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| KAN311610701, research and development project |
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| MSM0021622411, plan (intention) |
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