MARŠÍK, Přemysl and Mikhail BAKLANOV. Optical characteristics and UV modification of low-k materials. In 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. Beijing: IEEE, 2008, p. 765-768. ISBN 978-1-4244-2185-5.
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Basic information
Original name Optical characteristics and UV modification of low-k materials
Name in Czech Optické vlastnosti a UV modifikace low-k materiálů
Authors MARŠÍK, Přemysl (203 Czech Republic, guarantor) and Mikhail BAKLANOV (56 Belgium).
Edition Beijing, 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. p. 765-768, 4 pp. 2008.
Publisher IEEE
Other information
Original language English
Type of outcome Proceedings paper
Field of Study 10302 Condensed matter physics
Country of publisher China
Confidentiality degree is not subject to a state or trade secret
RIV identification code RIV/00216224:14310/08:00027845
Organization unit Faculty of Science
ISBN 978-1-4244-2185-5
UT WoS 000265971001036
Keywords in English low-k; ellipsometry; UV-cure
Tags ellipsometry, low-k, UV-cure
Tags International impact, Reviewed
Changed by Changed by: Mgr. Přemysl Maršík, Ph.D., učo 13477. Changed: 9/7/2009 09:57.
Abstract
We present a study of optical characteristics in visible and vacuum ultra-violet range of porous low-k dielectric films (prepared by chemical vapor deposition), and the constituent materials: Carbon doped oxide (SiCOH) matrix and organic porogen. The materials have been deposited as thin film samples and cured by thermal annealing and UV irradiation for various times. The optical properties of the films have been studied by variable angle spectroscopic ellipsometry in range from 2 eV to 9 eV and the composition has been analyzed by Fourier-transformed infrared spectroscopy. The analysis of the optical response of the porous dielectric as a mixture of matrix material, porogen and voids shows existence of decomposed porogen residuals inside the pores, even for long curing times. It is observed that the variation of deposition and curing conditions can control the amount of porogen residuals and the final porosity.
Abstract (in Czech)
We present a study of optical characteristics in visible and vacuum ultra-violet range of porous low-k dielectric films (prepared by chemical vapor deposition), and the constituent materials: Carbon doped oxide (SiCOH) matrix and organic porogen. The materials have been deposited as thin film samples and cured by thermal annealing and UV irradiation for various times. The optical properties of the films have been studied by variable angle spectroscopic ellipsometry in range from 2 eV to 9 eV and the composition has been analyzed by Fourier-transformed infrared spectroscopy. The analysis of the optical response of the porous dielectric as a mixture of matrix material, porogen and voids shows existence of decomposed porogen residuals inside the pores, even for long curing times. It is observed that the variation of deposition and curing conditions can control the amount of porogen residuals and the final porosity.
Links
MSM0021622410, plan (intention)Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures
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