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@article{862294,
author = {Caha, Ondřej and Meduňa, Mojmír},
article_location = {Amsterdam},
article_number = {23-24},
keywords = {Silicon; X-ray diffraction; Precipitates},
language = {eng},
issn = {0921-4526},
journal = {Physica B condensed matter},
title = {X-ray diffraction on precipitates in Czochralski-grown silicon},
volume = {404},
year = {2009}
}
TY - JOUR
ID - 862294
AU - Caha, Ondřej - Meduňa, Mojmír
PY - 2009
TI - X-ray diffraction on precipitates in Czochralski-grown silicon
JF - Physica B condensed matter
VL - 404
IS - 23-24
SP - 4626-4629
EP - 4626-4629
PB - Elsevier Science
SN - 09214526
KW - Silicon
KW - X-ray diffraction
KW - Precipitates
N2 - The results of a study of oxygen precipitates in Czochralski grown silicon are reported. High-resolution X-ray diffraction was used to measure reciprocal space maps on samples after various annealing treatment. The measurements were performed for several diffraction orders and systematic differences between reciprocal space maps around different diffractions were found. The diffuse X-ray scattering intensity was simulated, where the displacement field of precipitates was calculated using continuum elasticity theory. The simulations give correct asymptotic behavior and the interpretation of intermediate region between Huang and core scattering processes is found. The X-ray diffraction results are correlated to the infrared absorption spectroscopy measurement involving the interstitial oxygen concentration.
ER -
CAHA, Ondřej a Mojmír MEDUŇA. X-ray diffraction on precipitates in Czochralski-grown silicon. Online. \textit{Physica B condensed matter}. Amsterdam: Elsevier Science, 2009, roč.~404, 23-24, s.~4626-4629. ISSN~0921-4526. [citováno 2024-04-23]
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