MEDUŇA, Mojmír, Ondřej CAHA, Josef KUBĚNA, Alan KUBĚNA and Jiří BURŠÍK. Homogenization of CZ Si wafers by Tabula Rasa annealing. Physica B condensed matter. Amsterdam: Elsevier Science, 2009, vol. 404, 23-24, p. 4637–4640. ISSN 0921-4526.
Other formats:   BibTeX LaTeX RIS
Basic information
Original name Homogenization of CZ Si wafers by Tabula Rasa annealing
Name in Czech Homogenizace CZ Si desek pomocí žíhání Tabula Rasa
Authors MEDUŇA, Mojmír (203 Czech Republic, guarantor), Ondřej CAHA (203 Czech Republic), Josef KUBĚNA (203 Czech Republic), Alan KUBĚNA (203 Czech Republic) and Jiří BURŠÍK (203 Czech Republic).
Edition Physica B condensed matter, Amsterdam, Elsevier Science, 2009, 0921-4526.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher Netherlands
Confidentiality degree is not subject to a state or trade secret
Impact factor Impact factor: 1.056
RIV identification code RIV/00216224:14310/09:00029728
Organization unit Faculty of Science
UT WoS 000276029300038
Keywords (in Czech) křemík; infra red; precipitáty
Keywords in English Silicon; Infra red; Precipitates
Tags International impact, Reviewed
Changed by Changed by: Mgr. Mojmír Meduňa, Ph.D., učo 7898. Changed: 4/1/2010 12:28.
Abstract
The differences in oxygen precipitation, precipitate morphology and evolution of point defects in samples with and without Tabula Rasa applied were studied by experimental techniques such us infrared absorption spectroscopy, transmission electron microscopy, etching techniques and x-ray diffraction.
Abstract (in Czech)
Rozdíly v precipitaci kyslíku, morfologie precipitátů a vývoj bodových defektů byly studovány pomocí experimentálních technik jako jsou infračervená absorpce, transmisní elektronová mikroskopie, leptací techniky a rtg difrakce.
Links
GA202/09/1013, research and development projectName: Nukleace a růst kyslíkových precipitátů v křemíku
Investor: Czech Science Foundation, Nucleation and growth of oxygen precipitates in silicon
MSM0021622410, plan (intention)Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures
PrintDisplayed: 2/10/2024 17:28