KUBĚNA, Josef, Alan KUBĚNA, Ondřej CAHA and Mojmír MEDUŇA. Analysis of vacancy and interstitial nucleation kinetics in Si wafers during rapid thermal annealing. J.Phys.: Condens. Matter. Velká Britanie: IOP Publishing Ltd, 2009, vol. 21, No 10, p. 105402-105412. ISSN 0953-8984.
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Basic information
Original name Analysis of vacancy and interstitial nucleation kinetics in Si wafers during rapid thermal annealing
Name in Czech Analýza kinetiky nukleace vakancí a intersticiálů v Si deskách během rychlého teplotního žíhání
Authors KUBĚNA, Josef (203 Czech Republic, guarantor), Alan KUBĚNA (203 Czech Republic), Ondřej CAHA (203 Czech Republic) and Mojmír MEDUŇA (203 Czech Republic).
Edition J.Phys.: Condens. Matter, Velká Britanie, IOP Publishing Ltd, 2009, 0953-8984.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher United Kingdom of Great Britain and Northern Ireland
Confidentiality degree is not subject to a state or trade secret
Impact factor Impact factor: 1.964
RIV identification code RIV/00216224:14310/09:00029731
Organization unit Faculty of Science
UT WoS 000263493500026
Keywords (in Czech) křemík; vacance; intersticiály; nukleace
Keywords in English Silicon; vacancies; Interstitials; nucleation
Tags International impact, Reviewed
Changed by Changed by: Mgr. Mojmír Meduňa, Ph.D., učo 7898. Changed: 4/1/2010 17:06.
Abstract
The kinetics of the vacancy and self interstitial processes in Si wafers are studied in this paper. Detailed insight into nucleation processes, out diffusion and vacancy interstitial recombination during the RTA leads to a new model of interaction between vacancies and oxygen.
Abstract (in Czech)
V této publikaci je studována kinetika procesů vakancí a self-intersticiálů v Si deskaách. Detailní vhled do procesu nukleace, out difuze a rekombinace vakancí a intersticiálů během procesu RTA vede k novému modelu interakce mezi vakancemi a kyslíkem.
Links
GA202/09/1013, research and development projectName: Nukleace a růst kyslíkových precipitátů v křemíku
Investor: Czech Science Foundation, Nucleation and growth of oxygen precipitates in silicon
MSM0021622410, plan (intention)Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures
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