Detailed Information on Publication Record
2009
Analysis of vacancy and interstitial nucleation kinetics in Si wafers during rapid thermal annealing
KUBĚNA, Josef, Alan KUBĚNA, Ondřej CAHA and Mojmír MEDUŇABasic information
Original name
Analysis of vacancy and interstitial nucleation kinetics in Si wafers during rapid thermal annealing
Name in Czech
Analýza kinetiky nukleace vakancí a intersticiálů v Si deskách během rychlého teplotního žíhání
Authors
KUBĚNA, Josef (203 Czech Republic, guarantor), Alan KUBĚNA (203 Czech Republic), Ondřej CAHA (203 Czech Republic) and Mojmír MEDUŇA (203 Czech Republic)
Edition
J.Phys.: Condens. Matter, Velká Britanie, IOP Publishing Ltd, 2009, 0953-8984
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10302 Condensed matter physics
Country of publisher
United Kingdom of Great Britain and Northern Ireland
Confidentiality degree
není předmětem státního či obchodního tajemství
Impact factor
Impact factor: 1.964
RIV identification code
RIV/00216224:14310/09:00029731
Organization unit
Faculty of Science
UT WoS
000263493500026
Keywords (in Czech)
křemík; vacance; intersticiály; nukleace
Keywords in English
Silicon; vacancies; Interstitials; nucleation
Tags
International impact, Reviewed
Změněno: 4/1/2010 17:06, Mgr. Mojmír Meduňa, Ph.D.
V originále
The kinetics of the vacancy and self interstitial processes in Si wafers are studied in this paper. Detailed insight into nucleation processes, out diffusion and vacancy interstitial recombination during the RTA leads to a new model of interaction between vacancies and oxygen.
In Czech
V této publikaci je studována kinetika procesů vakancí a self-intersticiálů v Si deskaách. Detailní vhled do procesu nukleace, out difuze a rekombinace vakancí a intersticiálů během procesu RTA vede k novému modelu interakce mezi vakancemi a kyslíkem.
Links
| GA202/09/1013, research and development project |
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| MSM0021622410, plan (intention) |
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