Structural and defect changes of hydrogenated SiGe films due to annealing up to 600degC

SLÁDEK, Petr, Pavel SŤAHEL and Vilma BURŠÍKOVÁ. Structural and defect changes of hydrogenated SiGe films due to annealing up to 600degC. In 23rd International Conference on Amorphous and Nanocrystalline Semiconductors. 2009.

Basic information

• Original name: Structural and defect changes of hydrogenated SiGe films due to annealing up to 600degC
• Name in Czech: Strukturální a poruchové změny hydrogenovaných SiGe vrstev vlivem žíhání do 600degC
• Authors: SLÁDEK, Petr, Pavel SŤAHEL and Vilma BURŠÍKOVÁ.
• Edition: 23rd International Conference on Amorphous and Nanocrystalline Semiconductors, 2009.

Other information

• Original language: English
• Type of outcome: Conference abstract
• Field of Study: 10302 Condensed matter physics
• Country of publisher: Netherlands
• Confidentiality degree: is not subject to a state or trade secret
• WWW: URL
• Organization unit: Faculty of Science
• Keywords (in Czech): tenké vrstvy; SiGe; vodík; mechanické vlastnosti
• Keywords in English: thin films; SiGe; hydrogen; mechanical properties
• Tags: International impact, Reviewed

Abstract

In order to better understand the effects of the hydrogen incorporation on the defects and the disorder in the un-doped nano/microcrystalline SiGe:H, we performed a comparative study on samples deposited under different plasma conditions. With variation of the pressure, we were able to change the structure of SiGe:H films. We have used the combination of the infrared spectroscopy, CPM, PDS and thermal desorption measurements to study the thermal dependence of defect density, disorder, as well as hydrogen concentration. The film mechanical properties were test by depth sensing indentation technique. The results showing a different hydrogen bonding with the change of deposition conditions are interpreted as a whole by terms of the specific local hydrogen bond-ing environment, related to different growth mechanism.

Abstract (in Czech)

Pro lepší pochopení role vodíku na poruchy a uspořádanost nedopovaných nano a mikrokrystalických vrstev SiGe:H jsme zkoumali závislost mechanických a optoelektrických vlastností na depozičních podmínkách, zejména tlaku v plasmatu. \výsledky ukazují na různé chování vodíku v závislosti na růstovém mechanismu tenkých vrstev.

Links

• KAN311610701, research and development project: Name: Nanometrologie využívající metod rastrovací sondové mikroskopie

Investor: Academy of Sciences of the Czech Republic