Structural and defect changes of hydrogenated SiGe films due to annealing up to 600degC

SLÁDEK, Petr, Pavel SŤAHEL and Vilma BURŠÍKOVÁ. Structural and defect changes of hydrogenated SiGe films due to annealing up to 600degC. In 23rd International Conference on Amorphous and Nanocrystalline Semiconductors. 2009.

Basic information

Original name

Structural and defect changes of hydrogenated SiGe films due to annealing up to 600degC

Name in Czech

Strukturální a poruchové změny hydrogenovaných SiGe vrstev vlivem žíhání do 600degC

Authors

SLÁDEK, Petr, Pavel SŤAHEL and Vilma BURŠÍKOVÁ

Edition

23rd International Conference on Amorphous and Nanocrystalline Semiconductors, 2009

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Other information

Language

English

Type of outcome

Konferenční abstrakt

Field of Study

10302 Condensed matter physics

Country of publisher

Netherlands

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Organization unit

Faculty of Science

Keywords (in Czech)

tenké vrstvy; SiGe; vodík; mechanické vlastnosti

Keywords in English

thin films; SiGe; hydrogen; mechanical properties

Tags

International impact, Reviewed

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Abstract

V originále

In order to better understand the effects of the hydrogen incorporation on the defects and the disorder in the un-doped nano/microcrystalline SiGe:H, we performed a comparative study on samples deposited under different plasma conditions. With variation of the pressure, we were able to change the structure of SiGe:H films. We have used the combination of the infrared spectroscopy, CPM, PDS and thermal desorption measurements to study the thermal dependence of defect density, disorder, as well as hydrogen concentration. The film mechanical properties were test by depth sensing indentation technique. The results showing a different hydrogen bonding with the change of deposition conditions are interpreted as a whole by terms of the specific local hydrogen bond-ing environment, related to different growth mechanism.

In Czech

Pro lepší pochopení role vodíku na poruchy a uspořádanost nedopovaných nano a mikrokrystalických vrstev SiGe:H jsme zkoumali závislost mechanických a optoelektrických vlastností na depozičních podmínkách, zejména tlaku v plasmatu. \výsledky ukazují na různé chování vodíku v závislosti na růstovém mechanismu tenkých vrstev.

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Links

KAN311610701, research and development project

Name: Nanometrologie využívající metod rastrovací sondové mikroskopie Investor: Academy of Sciences of the Czech Republic