Detailed Information on Publication Record
2010
Profiling N-Type Dopants in Silicon
HOVORKA, Miloš, Filip MIKA, Petr MIKULÍK and Luděk FRANKBasic information
Original name
Profiling N-Type Dopants in Silicon
Authors
HOVORKA, Miloš (203 Czech Republic), Filip MIKA (203 Czech Republic), Petr MIKULÍK (203 Czech Republic, guarantor, belonging to the institution) and Luděk FRANK (203 Czech Republic)
Edition
Materials Transactions, 2010, 1345-9678
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10302 Condensed matter physics
Country of publisher
Japan
Confidentiality degree
není předmětem státního či obchodního tajemství
References:
Impact factor
Impact factor: 0.787
RIV identification code
RIV/00216224:14310/10:00043560
Organization unit
Faculty of Science
UT WoS
000276538900008
Keywords (in Czech)
křemík; dopant; fotoemisní elektronová mikroskopie; rastrovací elektronová mikroskopie
Keywords in English
silicon; dopant contrast; photoemission electron microscopy; scanning electron microscopy
Tags
International impact, Reviewed
Změněno: 25/7/2013 11:40, doc. RNDr. Petr Mikulík, Ph.D.
V originále
Variously doped n-type structures (dopant concentration between 1.5*10^16 cm^-3 and 1.5*10^19 cm^-3) on a lightly doped p-type silicon substrate (doped to 1.9*10^15 cm^-3) have been examined by a photoemission electron microscope equipped with a high-pass energy filter and by an ultra-high vacuum scanning low energy electron microscope. High contrast have been observed between the n-type areas and the p-type substrate and its monotone dependency on the doping level of structures has been manifested. The relation between the energy spectra of photoelectrons and the doping level has been studied, too. The scanning electron microscope images obtained with the landing energy of the primary beam in the low keV range exhibit contrasts similar to those appearing in the full threshold photoemission micrographs.
In Czech
Dotované struktury n-typu (koncentrace dopantu mezi 1.5*10^16 cm-3 a 1.5*10^19 cm^-3) na slabě dotovaném křemíku p-typu (dotace 1.9*10^15 cm^-3) byly zkoumány fotoemisním elektronovým mikroskopem s energiovým filtrem typu horní propust a UHV rastrovacím elektronovým mikroskopem. Byl získán vysoký kontrast mezi jednotlivými oblastmi, který vzrůstá s množstvím dopantu v n-oblastech.
Links
| MSM0021622410, plan (intention) |
|