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@article{877269,
author = {Hovorka, Miloš and Mika, Filip and Mikulík, Petr and Frank, Luděk},
article_number = {2},
keywords = {silicon; dopant contrast; photoemission electron microscopy; scanning electron microscopy},
language = {eng},
issn = {1345-9678},
journal = {Materials Transactions},
title = {Profiling N-Type Dopants in Silicon},
url = {http://www.jim.or.jp/journal/e/51/02/237.html},
volume = {51},
year = {2010}
}
TY - JOUR
ID - 877269
AU - Hovorka, Miloš - Mika, Filip - Mikulík, Petr - Frank, Luděk
PY - 2010
TI - Profiling N-Type Dopants in Silicon
JF - Materials Transactions
VL - 51
IS - 2
SP - 237-242
EP - 237-242
SN - 13459678
KW - silicon
KW - dopant contrast
KW - photoemission electron microscopy
KW - scanning electron microscopy
UR - http://www.jim.or.jp/journal/e/51/02/237.html
N2 - Variously doped n-type structures (dopant concentration between 1.5*10^16 cm^-3 and 1.5*10^19 cm^-3) on a lightly doped p-type silicon substrate (doped to 1.9*10^15 cm^-3) have been examined by a photoemission electron microscope equipped with a high-pass energy filter and by an ultra-high vacuum scanning low energy electron microscope. High contrast have been observed between the n-type areas and the p-type substrate and its monotone dependency on the doping level of structures has been manifested. The relation between the energy spectra of photoelectrons and the doping level has been studied, too. The scanning electron microscope images obtained with the landing energy of the primary beam in the low keV range exhibit contrasts similar to those appearing in the full threshold photoemission micrographs.
ER -
HOVORKA, Miloš, Filip MIKA, Petr MIKULÍK and Luděk FRANK. Profiling N-Type Dopants in Silicon. \textit{Materials Transactions}. 2010, vol.~51, No~2, p.~237-242. ISSN~1345-9678.
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