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@article{880732,
author = {Sládek, Petr and Buršíková, Vilma and Sťahel, Pavel},
article_location = {Weinheim},
article_number = {3-4},
keywords = {SiGe; thin films; deposition conditions; structure; lattice properties},
language = {eng},
issn = {1610-1642},
journal = {physica status solidi (c)},
title = {Structural and defect changes of hydrogenated SiGe films due to annealing up to 600°C},
url = {http://www.pss-c.com},
volume = {7/2010},
year = {2010}
}
TY - JOUR
ID - 880732
AU - Sládek, Petr - Buršíková, Vilma - Sťahel, Pavel
PY - 2010
TI - Structural and defect changes of hydrogenated SiGe films due to annealing up to 600°C
JF - physica status solidi (c)
VL - 7/2010
IS - 3-4
SP - 820-823
EP - 820-823
PB - WILEY-VCH Verlag GmbH
SN - 16101642
KW - SiGe
KW - thin films
KW - deposition conditions
KW - structure
KW - lattice properties
UR - http://www.pss-c.com
N2 - In order to better understand the effects of the hydrogen incorporation on the defects and the disorder in the undoped nano/microcrystalline SiGe:H, we performed a comparative study on samples deposited under different plasma conditions. With variation of the pressure, we were able to change the structure of SiGe:H films. We have used the combination of the infrared spectroscopy, CPM, PDS and thermal desorption measurements to study the thermal dependence of defect density, disorder, as well as hydrogen concentration. The film mechanical properties were tested by depth sensing indentation technique. The results showing a different hydrogen bonding with the change of deposition conditions are interpreted as a whole by terms of the specific local hydrogen bonding environment, related to different growth mechanism.
ER -
SLÁDEK, Petr, Vilma BURŠÍKOVÁ and Pavel SŤAHEL. Structural and defect changes of hydrogenated SiGe films due to annealing up to 600°C. \textit{physica status solidi (c)}. Weinheim: WILEY-VCH Verlag GmbH, 2010, 7/2010, 3-4, p.~820-823. ISSN~1610-1642.
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