J 2010

Structural and defect changes of hydrogenated SiGe films due to annealing up to 600°C

SLÁDEK, Petr, Vilma BURŠÍKOVÁ and Pavel SŤAHEL

Basic information

Original name

Structural and defect changes of hydrogenated SiGe films due to annealing up to 600°C

Authors

SLÁDEK, Petr (203 Czech Republic, guarantor, belonging to the institution), Vilma BURŠÍKOVÁ (203 Czech Republic, belonging to the institution) and Pavel SŤAHEL (203 Czech Republic, belonging to the institution)

Edition

physica status solidi (c), Weinheim, WILEY-VCH Verlag GmbH, 2010, 1610-1642

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

Germany

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

RIV identification code

RIV/00216224:14310/10:00040517

Organization unit

Faculty of Science

UT WoS

000287213400079

Keywords (in Czech)

SiGe; tenké vrstvy; depoziční podmínky; struktura; vlastnosti mřížky

Keywords in English

SiGe; thin films; deposition conditions; structure; lattice properties

Tags

International impact, Reviewed
Změněno: 3/2/2020 15:24, Dana Nesnídalová

Abstract

V originále

In order to better understand the effects of the hydrogen incorporation on the defects and the disorder in the undoped nano/microcrystalline SiGe:H, we performed a comparative study on samples deposited under different plasma conditions. With variation of the pressure, we were able to change the structure of SiGe:H films. We have used the combination of the infrared spectroscopy, CPM, PDS and thermal desorption measurements to study the thermal dependence of defect density, disorder, as well as hydrogen concentration. The film mechanical properties were tested by depth sensing indentation technique. The results showing a different hydrogen bonding with the change of deposition conditions are interpreted as a whole by terms of the specific local hydrogen bonding environment, related to different growth mechanism.

Links

KAN311610701, research and development project
Name: Nanometrologie využívající metod rastrovací sondové mikroskopie
Investor: Academy of Sciences of the Czech Republic