Detailed Information on Publication Record
2010
Structural and defect changes of hydrogenated SiGe films due to annealing up to 600°C
SLÁDEK, Petr, Vilma BURŠÍKOVÁ and Pavel SŤAHELBasic information
Original name
Structural and defect changes of hydrogenated SiGe films due to annealing up to 600°C
Authors
SLÁDEK, Petr (203 Czech Republic, guarantor, belonging to the institution), Vilma BURŠÍKOVÁ (203 Czech Republic, belonging to the institution) and Pavel SŤAHEL (203 Czech Republic, belonging to the institution)
Edition
physica status solidi (c), Weinheim, WILEY-VCH Verlag GmbH, 2010, 1610-1642
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10302 Condensed matter physics
Country of publisher
Germany
Confidentiality degree
není předmětem státního či obchodního tajemství
References:
RIV identification code
RIV/00216224:14310/10:00040517
Organization unit
Faculty of Science
UT WoS
000287213400079
Keywords (in Czech)
SiGe; tenké vrstvy; depoziční podmínky; struktura; vlastnosti mřížky
Keywords in English
SiGe; thin films; deposition conditions; structure; lattice properties
Tags
International impact, Reviewed
Změněno: 3/2/2020 15:24, Dana Nesnídalová
Abstract
V originále
In order to better understand the effects of the hydrogen incorporation on the defects and the disorder in the undoped nano/microcrystalline SiGe:H, we performed a comparative study on samples deposited under different plasma conditions. With variation of the pressure, we were able to change the structure of SiGe:H films. We have used the combination of the infrared spectroscopy, CPM, PDS and thermal desorption measurements to study the thermal dependence of defect density, disorder, as well as hydrogen concentration. The film mechanical properties were tested by depth sensing indentation technique. The results showing a different hydrogen bonding with the change of deposition conditions are interpreted as a whole by terms of the specific local hydrogen bonding environment, related to different growth mechanism.
Links
KAN311610701, research and development project |
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