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@article{880732, author = {Sládek, Petr and Buršíková, Vilma and Sťahel, Pavel}, article_location = {Weinheim}, article_number = {3-4}, keywords = {SiGe; thin films; deposition conditions; structure; lattice properties}, language = {eng}, issn = {1610-1642}, journal = {physica status solidi (c)}, title = {Structural and defect changes of hydrogenated SiGe films due to annealing up to 600°C}, url = {http://www.pss-c.com}, volume = {7/2010}, year = {2010} }
TY - JOUR ID - 880732 AU - Sládek, Petr - Buršíková, Vilma - Sťahel, Pavel PY - 2010 TI - Structural and defect changes of hydrogenated SiGe films due to annealing up to 600°C JF - physica status solidi (c) VL - 7/2010 IS - 3-4 SP - 820-823 EP - 820-823 PB - WILEY-VCH Verlag GmbH SN - 16101642 KW - SiGe KW - thin films KW - deposition conditions KW - structure KW - lattice properties UR - http://www.pss-c.com N2 - In order to better understand the effects of the hydrogen incorporation on the defects and the disorder in the undoped nano/microcrystalline SiGe:H, we performed a comparative study on samples deposited under different plasma conditions. With variation of the pressure, we were able to change the structure of SiGe:H films. We have used the combination of the infrared spectroscopy, CPM, PDS and thermal desorption measurements to study the thermal dependence of defect density, disorder, as well as hydrogen concentration. The film mechanical properties were tested by depth sensing indentation technique. The results showing a different hydrogen bonding with the change of deposition conditions are interpreted as a whole by terms of the specific local hydrogen bonding environment, related to different growth mechanism. ER -
SLÁDEK, Petr, Vilma BURŠÍKOVÁ and Pavel SŤAHEL. Structural and defect changes of hydrogenated SiGe films due to annealing up to 600°C. \textit{physica status solidi (c)}. Weinheim: WILEY-VCH Verlag GmbH, 2010, 7/2010, 3-4, p.~820-823. ISSN~1610-1642.
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