KLENOVSKÝ, Petr, Vlastimil KŘÁPEK, Dominik MUNZAR and Josef HUMLÍČEK. Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer. Online. Journal of Physics: Conference Series. Institute of Physics Publishing, 2010, vol. 244, No 012086, 4 pp. ISSN 1742-6588. [citováno 2024-04-23] |
Other formats:
BibTeX
LaTeX
RIS
@article{908071, author = {Klenovský, Petr and Křápek, Vlastimil and Munzar, Dominik and Humlíček, Josef}, article_number = {012086}, keywords = {Quantum Dots; Semiconductor Compounds; Mechanical properties of nanoscale systems}, language = {eng}, issn = {1742-6588}, journal = {Journal of Physics: Conference Series}, title = {Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer}, url = {http://iopscience.iop.org/1742-6596/245/1/012086/}, volume = {244}, year = {2010} }
TY - JOUR ID - 908071 AU - Klenovský, Petr - Křápek, Vlastimil - Munzar, Dominik - Humlíček, Josef PY - 2010 TI - Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer JF - Journal of Physics: Conference Series VL - 244 IS - 012086 PB - Institute of Physics Publishing SN - 17426588 KW - Quantum Dots KW - Semiconductor Compounds KW - Mechanical properties of nanoscale systems UR - http://iopscience.iop.org/1742-6596/245/1/012086/ N2 - We present results of our 8-band k.p calculations of the emission energy of InAs/GaAs quantum dots (QDs) covered with GaAs1-xSbx strain reducing overlayer (SRO). In agreement with previous experimental observations we find a strong red shift of the emission with increasing Sb content. We explain this effect by: (1) The lowering of the valence band offset between the QD and the SRO with increasing Sb content resulting in the type-II QDs with holes confined in the SRO for Sb concentration above 14%. (2) The reduction of compressive strain inside the QDs. The contributions of these mechanisms to the total red shift are estimated and compared. For realistic shape and size of the QD and a realistic value of the SRO thickness the previously measured photoluminescence data are reproduced with fairly good accuracy. ER -
KLENOVSKÝ, Petr, Vlastimil KŘÁPEK, Dominik MUNZAR and Josef HUMLÍČEK. Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer. Online. \textit{Journal of Physics: Conference Series}. Institute of Physics Publishing, 2010, vol.~244, No~012086, 4 pp. ISSN~1742-6588. [citováno 2024-04-23]
|