| KLENOVSKÝ, Petr, Vlastimil KŘÁPEK, Dominik MUNZAR a Josef HUMLÍČEK. Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer. Online. Journal of Physics: Conference Series. Institute of Physics Publishing, 2010, roč. 244, č. 012086, 4 s. ISSN 1742-6588. [citováno 2024-04-23] |
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@article{908071,
author = {Klenovský, Petr and Křápek, Vlastimil and Munzar, Dominik and Humlíček, Josef},
article_number = {012086},
keywords = {Quantum Dots; Semiconductor Compounds; Mechanical properties of nanoscale systems},
language = {eng},
issn = {1742-6588},
journal = {Journal of Physics: Conference Series},
title = {Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer},
url = {http://iopscience.iop.org/1742-6596/245/1/012086/},
volume = {244},
year = {2010}
}
TY - JOUR
ID - 908071
AU - Klenovský, Petr - Křápek, Vlastimil - Munzar, Dominik - Humlíček, Josef
PY - 2010
TI - Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer
JF - Journal of Physics: Conference Series
VL - 244
IS - 012086
PB - Institute of Physics Publishing
SN - 17426588
KW - Quantum Dots
KW - Semiconductor Compounds
KW - Mechanical properties of nanoscale systems
UR - http://iopscience.iop.org/1742-6596/245/1/012086/
N2 - We present results of our 8-band k.p calculations of the emission energy of InAs/GaAs quantum dots (QDs) covered with GaAs1-xSbx strain reducing overlayer (SRO). In agreement with previous experimental observations we find a strong red shift of the emission with increasing Sb content. We explain this effect by: (1) The lowering of the valence band offset between the QD and the SRO with increasing Sb content resulting in the type-II QDs with holes confined in the SRO for Sb concentration above 14%. (2) The reduction of compressive strain inside the QDs. The contributions of these mechanisms to the total red shift are estimated and compared. For realistic shape and size of the QD and a realistic value of the SRO thickness the previously measured photoluminescence data are reproduced with fairly good accuracy.
ER -
KLENOVSKÝ, Petr, Vlastimil KŘÁPEK, Dominik MUNZAR a Josef HUMLÍČEK. Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer. Online. \textit{Journal of Physics: Conference Series}. Institute of Physics Publishing, 2010, roč.~244, č.~012086, 4 s. ISSN~1742-6588. [citováno 2024-04-23]
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