Oxygen Precipitation in CZ Si Wafers after High Temperature Pre-annealing
MEDUŇA, Mojmír, Ondřej CAHA, Josef KUBĚNA, Alan KUBĚNA, Milan SVOBODA and Jiří BURŠÍK. Oxygen Precipitation in CZ Si Wafers after High Temperature Pre-annealing. In SILICON 2010. 2010. ISBN 978-80-254-7361-0. |
Other formats:
BibTeX
LaTeX
RIS
|
Basic information | |
---|---|
Original name | Oxygen Precipitation in CZ Si Wafers after High Temperature Pre-annealing |
Name in Czech | Precipitace kyslíku v CZ Si deskách po vysokoteplotním předžíhání |
Authors | MEDUŇA, Mojmír (203 Czech Republic, guarantor, belonging to the institution), Ondřej CAHA (203 Czech Republic, belonging to the institution), Josef KUBĚNA (203 Czech Republic, belonging to the institution), Alan KUBĚNA (203 Czech Republic, belonging to the institution), Milan SVOBODA (203 Czech Republic) and Jiří BURŠÍK (203 Czech Republic). |
Edition | SILICON 2010, 2010. |
Other information | |
---|---|
Original language | English |
Type of outcome | Conference abstract |
Field of Study | 10302 Condensed matter physics |
Country of publisher | Czech Republic |
Confidentiality degree | is not subject to a state or trade secret |
RIV identification code | RIV/00216224:14310/10:00046555 |
Organization unit | Faculty of Science |
ISBN | 978-80-254-7361-0 |
Keywords in English | oxygen precipitžation; si wafers |
Changed by | Changed by: RNDr. Jiří Buršík, DSc., učo 54857. Changed: 19/1/2012 18:33. |
Abstract |
---|
In this work we study two stage and three stage annealing processes with application of Tabula rasa. The evolution of precipitates at various phases during annealing process for various temperatures was obtained from series of experimental techniques. |
Abstract (in Czech) |
---|
V této práci studujeme dvou a třístupňové žíhací procesy s aplikaci Tabula rasa. Vývoj precipitace v různých fázích během žíhacích procesů pro různé teploty byly získány různými experimentálními technikami. |
Links | |
---|---|
GA202/09/1013, research and development project | Name: Nukleace a růst kyslíkových precipitátů v křemíku |
Investor: Czech Science Foundation, Nucleation and growth of oxygen precipitates in silicon | |
MSM0021622410, plan (intention) | Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur |
Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures |
PrintDisplayed: 1/8/2024 02:21