a 2010

X-ray scattering study of oxide precipitates in Cz-Si

CAHA, Ondřej, Mojmír MEDUŇA, Silvie BERNATOVÁ, Jiří RŮŽIČKA, Petr MIKULÍK et. al.

Basic information

Original name

X-ray scattering study of oxide precipitates in Cz-Si

Name in Czech

Studie rtg rozptylu na kyslíkových precipitátech v CZ Si

Authors

CAHA, Ondřej (203 Czech Republic, guarantor, belonging to the institution), Mojmír MEDUŇA (203 Czech Republic, belonging to the institution), Silvie BERNATOVÁ (203 Czech Republic, belonging to the institution), Jiří RŮŽIČKA (203 Czech Republic, belonging to the institution), Petr MIKULÍK (203 Czech Republic, belonging to the institution), Jiří BURŠÍK (203 Czech Republic), Milan SVOBODA (203 Czech Republic) and S. BERNSTORFF (40 Austria)

Edition

2010

Other information

Language

English

Type of outcome

Konferenční abstrakt

Field of Study

10302 Condensed matter physics

Country of publisher

Czech Republic

Confidentiality degree

není předmětem státního či obchodního tajemství

RIV identification code

RIV/00216224:14310/10:00046556

Organization unit

Faculty of Science

ISBN

978-80-254-7361-0

Keywords in English

x-ray; silicon; defects
Změněno: 23/1/2012 15:58, doc. Mgr. Ondřej Caha, Ph.D.

Abstract

ORIG CZ

V originále

Two x-ray diffraction methods were used for characterization of the oxide precipitates in Czochralski silicon series of samples. The maping of the diffuse scattering around reciprocal lattice point in Bragg geometry and the simultaneous measurement of the diffracted and transmitted beam intensity in the Laue diffraction geometry.

In Czech

Dvě difrakční metody byly použity pro charakterizaci kyslíkových precipitátů v sérii vzorků CZ křemíku.

Links

GA202/09/1013, research and development project
Name: Nukleace a růst kyslíkových precipitátů v křemíku
Investor: Czech Science Foundation, Nucleation and growth of oxygen precipitates in silicon
GP202/09/P410, research and development project
Name: Řízení elastického napětí v magnetických polovodičích
Investor: Czech Science Foundation, Strain engineering in diluted magnetic semiconductors
MSM0021622410, plan (intention)
Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures