Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules

KŘÁPEK, Vlastimil, Petr KLENOVSKÝ, Armando RASTELLI, Oliver G SCHMIDT and Dominik MUNZAR. Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules. Online. Journal of Physics: Conference Series. Institute of Physics Publishing, 2010, vol. 245, No 012027, 4 pp. ISSN 1742-6588. [citováno 2024-04-24]

Basic information

• Original name: Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules
• Authors: KŘÁPEK, Vlastimil (203 Czech Republic, belonging to the institution), Petr KLENOVSKÝ (203 Czech Republic, belonging to the institution), Armando RASTELLI (380 Italy), Oliver G SCHMIDT (276 Germany) and Dominik MUNZAR (203 Czech Republic, guarantor, belonging to the institution)
• Edition: Journal of Physics: Conference Series, Institute of Physics Publishing, 2010, 1742-6588.

Other information

• Original language: English
• Type of outcome: Article in a journal
• Field of Study: 10302 Condensed matter physics
• Country of publisher: United Kingdom of Great Britain and Northern Ireland
• Confidentiality degree: is not subject to a state or trade secret
• WWW: URL
• RIV identification code: RIV/00216224:14310/10:00047199
• Organization unit: Faculty of Science
• UT WoS: 000294907400027
• Keywords in English: Excitons and related phenomena; Tunneling; Quantum dots; Semiconductor compounds
• Tags: International impact, Reviewed

Abstract

We calculate the excitonic structure of pairs of GaAs/AlGaAs quantum dots forming lateral molecules and obtain the entanglement of exciton states. The following advantages of the lateral geometry over the vertical one are found: (1) The energy structures of the dots forming a molecule can be in principle identical. (2) Comparable tunneling of electrons and holes ensures a high entanglement of antisymmetric excitons. A drawback of existing structures are very low tunneling energies, which make the entanglement vulnerable against differences in the sizes and shapes of both dots.

Links

• GA202/09/0676, research and development project: Name: Vliv krycích vrstev na elektronové stavy v kvantových tečkách

Investor: Czech Science Foundation

• MSM0021622410, plan (intention): Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur

Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures

• MUNI/A/1047/2009, interní kód MU: Name: Struktura, elektronová struktura a optická odezva pokročilých materiálů

Investor: Masaryk University, Category A