| KŘÁPEK, Vlastimil, Petr KLENOVSKÝ, Armando RASTELLI, Oliver G SCHMIDT a Dominik MUNZAR. Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules. Journal of Physics: Conference Series. Institute of Physics Publishing, roč. 245, č. 012027, 4 s. ISSN 1742-6588. 2010. |
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@article{924629,
author = {Křápek, Vlastimil and Klenovský, Petr and Rastelli, Armando and Schmidt, Oliver G and Munzar, Dominik},
article_number = {012027},
keywords = {Excitons and related phenomena; Tunneling; Quantum dots; Semiconductor compounds},
language = {eng},
issn = {1742-6588},
journal = {Journal of Physics: Conference Series},
title = {Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules},
url = {http://iopscience.iop.org/1742-6596/245/1/012027},
volume = {245},
year = {2010}
}
TY - JOUR
ID - 924629
AU - Křápek, Vlastimil - Klenovský, Petr - Rastelli, Armando - Schmidt, Oliver G - Munzar, Dominik
PY - 2010
TI - Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules
JF - Journal of Physics: Conference Series
VL - 245
IS - 012027
PB - Institute of Physics Publishing
SN - 17426588
KW - Excitons and related phenomena
KW - Tunneling
KW - Quantum dots
KW - Semiconductor compounds
UR - http://iopscience.iop.org/1742-6596/245/1/012027
N2 - We calculate the excitonic structure of pairs of GaAs/AlGaAs quantum dots forming lateral molecules and obtain the entanglement of exciton states. The following advantages of the lateral geometry over the vertical one are found: (1) The energy structures of the dots forming a molecule can be in principle identical. (2) Comparable tunneling of electrons and holes ensures a high entanglement of antisymmetric excitons. A drawback of existing structures are very low tunneling energies, which make the entanglement vulnerable against differences in the sizes and shapes of both dots.
ER -
KŘÁPEK, Vlastimil, Petr KLENOVSKÝ, Armando RASTELLI, Oliver G SCHMIDT a Dominik MUNZAR. Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules. \textit{Journal of Physics: Conference Series}. Institute of Physics Publishing, roč.~245, č.~012027, 4 s. ISSN~1742-6588. 2010.
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