Infrared Absorption Spectroscopy of Defects in Floating Zone Silicon

ŠTOUDEK, Richard. Infrared Absorption Spectroscopy of Defects in Floating Zone Silicon. In Marta Kořenská and Luboš Pazdera. 8th Interantional Conference NDT 2010 - Non-Destructive Testing in Engineering Practice (id 18982). Brno: CERM, 2010, p. 199-204. ISBN 978-80-7204-723-9.

Basic information

• Original name: Infrared Absorption Spectroscopy of Defects in Floating Zone Silicon
• Authors: ŠTOUDEK, Richard (203 Czech Republic, guarantor, belonging to the institution).
• Edition: Brno, 8th Interantional Conference NDT 2010 - Non-Destructive Testing in Engineering Practice (id 18982), p. 199-204, 6 pp. 2010.
• Publisher: CERM

Other information

• Original language: English
• Type of outcome: Proceedings paper
• Field of Study: 10302 Condensed matter physics
• Country of publisher: Czech Republic
• Confidentiality degree: is not subject to a state or trade secret
• RIV identification code: RIV/00216224:14310/10:00047310
• Organization unit: Faculty of Science
• ISBN: 978-80-7204-723-9
• Keywords in English: Infrared spectroscopy; silicon; interstitial oxygen; substitutional carbon.

Abstract

The infrared absorption method was used to study interstitial oxygen and substitutional carbon in floating zone silicon samples. Transmittance spectra have been measured in the temperature range from 10 to 300 K. This allowed us to determine low concentrations of interstitial oxygen and substitutional carbon in these samples. In the data analysis, we focused on isotopic splitting of the interstitial oxygen absorption band. The low temperature absorption spectra have been analysed using Lorentz oscillators and thus we were able to determine the abundances of the silicon isotopes in our samples.

Links

• MSM0021622410, plan (intention): Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur

Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures