HOLÝ, Václav, Xavier MARTÍ, Lukáš HORÁK, Ondřej CAHA, Vít NOVÁK, Miroslav CUKR and Tobias Urs SCHÜLLI. Density of Mn interstitials in (Ga,Mn)As epitaxial layers determined by anomalous x-ray diffraction. Applied Physics Letters. USA: American Institute of Physics, 2010, vol. 97, No 18, p. 181913-181915. ISSN 0003-6951. Available from: https://dx.doi.org/10.1063/1.3514240.
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Basic information
Original name Density of Mn interstitials in (Ga,Mn)As epitaxial layers determined by anomalous x-ray diffraction
Name in Czech Hustota Mn intersticiálů v GaMnAs určená anomální rtg difrakcí
Authors HOLÝ, Václav (203 Czech Republic), Xavier MARTÍ (724 Spain), Lukáš HORÁK (203 Czech Republic), Ondřej CAHA (203 Czech Republic, guarantor, belonging to the institution), Vít NOVÁK (203 Czech Republic), Miroslav CUKR (203 Czech Republic) and Tobias Urs SCHÜLLI (276 Germany).
Edition Applied Physics Letters, USA, American Institute of Physics, 2010, 0003-6951.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher United States of America
Confidentiality degree is not subject to a state or trade secret
WWW URL
Impact factor Impact factor: 3.841
RIV identification code RIV/00216224:14310/10:00049717
Organization unit Faculty of Science
Doi http://dx.doi.org/10.1063/1.3514240
UT WoS 000283934100025
Keywords (in Czech) feromagnetické polovodičů; anomální rtg difrakce
Keywords in English ferromagnetic semiconductos; anomal x-ray diffraction
Tags AKb, rivok
Tags International impact, Reviewed
Changed by Changed by: Mgr. Marie Šípková, DiS., učo 437722. Changed: 24/6/2020 10:20.
Abstract
Densities of Mn ions in epitaxial layers of (Ga,Mn)As were determined by anomalous x-ray diffraction, i.e., by a measurement of the dependence of the intensity of weak diffraction 002 on the photon energy around the MnK absorption edge. From the measured data it was possible to determine the density of Mn ions in substitutional positions and the difference in the Mn densities in two possible interstitial positions in the GaAs lattice. The data confirm the previous finding that the density of Mn interstitials in centers of Ga tetrahedrons decrease during post-growth annealing.
Abstract (in Czech)
Hustota intersticiálů Mn v GaMnAs byla určena anomální rtg difrakcí, t.j. měřením závislosti intenzity slabé difrakce 002 na energii fotonu kolem K absorpční hrany Mn.
Links
GP202/09/P410, research and development projectName: Řízení elastického napětí v magnetických polovodičích
Investor: Czech Science Foundation, Strain engineering in diluted magnetic semiconductors
MSM0021622410, plan (intention)Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures
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