Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots

PLUMHOF, Johannes David, Vlastimil KŘÁPEK, Fei DING, K. D. JOENS, R. HAFENBRAK, Petr KLENOVSKÝ, A. HERKLOTZ, K. DORR, P. MICHLER, Armando RASTELLI and Oliver G. SCHMIDT. Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots. Physical Review B. USA: American Physical Society, 2011, vol. 83, No 12, p. "nestrankovano", 4 pp. ISSN 1098-0121. Available from: https://dx.doi.org/10.1103/PhysRevB.83.121302.

Basic information

• Original name: Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots
• Authors: PLUMHOF, Johannes David (276 Germany), Vlastimil KŘÁPEK (203 Czech Republic, guarantor, belonging to the institution), Fei DING (156 China), K. D. JOENS (276 Germany), R. HAFENBRAK (276 Germany), Petr KLENOVSKÝ (203 Czech Republic, belonging to the institution), A. HERKLOTZ (276 Germany), K. DORR (276 Germany), P. MICHLER (276 Germany), Armando RASTELLI (380 Italy) and Oliver G. SCHMIDT (276 Germany).
• Edition: Physical Review B, USA, American Physical Society, 2011, 1098-0121.

Other information

• Original language: English
• Type of outcome: Article in a journal
• Field of Study: 10302 Condensed matter physics
• Country of publisher: United States of America
• Confidentiality degree: is not subject to a state or trade secret
• WWW: URL
• Impact factor: Impact factor: 3.691
• RIV identification code: RIV/00216224:14310/11:00049737
• Organization unit: Faculty of Science
• Doi: http://dx.doi.org/10.1103/PhysRevB.83.121302
• UT WoS: 000288160300001
• Keywords in English: ENTANGLED PHOTON PAIRS; SEMICONDUCTOR; SPIN
• Tags: AKR, rivok
• Tags: International impact, Reviewed

Abstract

We study the effect of elastic anisotropic biaxial strain, induced by a piezoelectric actuator, on the light emitted by neutral excitons confined in different kinds of epitaxial quantum dots. We find that the light polarization rotates by up to similar to 80 degrees and the fine structure splitting (FSS) varies nonmonotonically by several tens of mu eV as the strain is varied. These findings provide the experimental proof of a recently predicted strain-induced anticrossing of the bright states of neutral excitons in quantum dots. Calculations on model dots qualitatively reproduce the observations and suggest that the minimum reachable FSS critically depends on the orientation of the strain axis relative to the dot elongation.

Links

• GA202/09/0676, research and development project: Name: Vliv krycích vrstev na elektronové stavy v kvantových tečkách

Investor: Czech Science Foundation

• MSM0021622410, plan (intention): Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur

Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures

• MUNI/A/1047/2009, interní kód MU: Name: Struktura, elektronová struktura a optická odezva pokročilých materiálů

Investor: Masaryk University, Category A