| PLUMHOF, Johannes David, Vlastimil KŘÁPEK, Fei DING, K. D. JOENS, R. HAFENBRAK, Petr KLENOVSKÝ, A. HERKLOTZ, K. DORR, P. MICHLER, Armando RASTELLI a Oliver G. SCHMIDT. Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots. Physical Review B. USA: American Physical Society, 2011, roč. 83, č. 12, s. "nestrankovano", 4 s. ISSN 1098-0121. Dostupné z: https://dx.doi.org/10.1103/PhysRevB.83.121302. |
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@article{932540,
author = {Plumhof, Johannes David and Křápek, Vlastimil and Ding, Fei and Joens, K. D. and Hafenbrak, R. and Klenovský, Petr and Herklotz, A. and Dorr, K. and Michler, P. and Rastelli, Armando and Schmidt, Oliver G.},
article_location = {USA},
article_number = {12},
doi = {http://dx.doi.org/10.1103/PhysRevB.83.121302},
keywords = {ENTANGLED PHOTON PAIRS; SEMICONDUCTOR; SPIN},
language = {eng},
issn = {1098-0121},
journal = {Physical Review B},
title = {Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots},
url = {http://prb.aps.org/abstract/PRB/v83/i12/e121302},
volume = {83},
year = {2011}
}
TY - JOUR
ID - 932540
AU - Plumhof, Johannes David - Křápek, Vlastimil - Ding, Fei - Joens, K. D. - Hafenbrak, R. - Klenovský, Petr - Herklotz, A. - Dorr, K. - Michler, P. - Rastelli, Armando - Schmidt, Oliver G.
PY - 2011
TI - Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots
JF - Physical Review B
VL - 83
IS - 12
SP - "nestrankovano"
EP - "nestrankovano"
PB - American Physical Society
SN - 10980121
KW - ENTANGLED PHOTON PAIRS
KW - SEMICONDUCTOR
KW - SPIN
UR - http://prb.aps.org/abstract/PRB/v83/i12/e121302
L2 - http://prb.aps.org/abstract/PRB/v83/i12/e121302
N2 - We study the effect of elastic anisotropic biaxial strain, induced by a piezoelectric actuator, on the light emitted by neutral excitons confined in different kinds of epitaxial quantum dots. We find that the light polarization rotates by up to similar to 80 degrees and the fine structure splitting (FSS) varies nonmonotonically by several tens of mu eV as the strain is varied. These findings provide the experimental proof of a recently predicted strain-induced anticrossing of the bright states of neutral excitons in quantum dots. Calculations on model dots qualitatively reproduce the observations and suggest that the minimum reachable FSS critically depends on the orientation of the strain axis relative to the dot elongation.
ER -
PLUMHOF, Johannes David, Vlastimil KŘÁPEK, Fei DING, K. D. JOENS, R. HAFENBRAK, Petr KLENOVSKÝ, A. HERKLOTZ, K. DORR, P. MICHLER, Armando RASTELLI a Oliver G. SCHMIDT. Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots. \textit{Physical Review B}. USA: American Physical Society, 2011, roč.~83, č.~12, s.~''nestrankovano'', 4 s. ISSN~1098-0121. Dostupné z: https://dx.doi.org/10.1103/PhysRevB.83.121302.
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