| MARŠÍK, Přemysl, A. M. URBANOWICZ, P. VERDONCK, D. DE ROEST, H. SPREY a M. R. BAKLANOV. Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance. Thin Solid Films. UK Oxford: Elsevier science, 2011, roč. 519, č. 11, s. 3619-3626. ISSN 0040-6090. Dostupné z: https://dx.doi.org/10.1016/j.tsf.2011.01.339. |
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@article{938213,
author = {Maršík, Přemysl and Urbanowicz, A. M. and Verdonck, P. and De Roest, D. and Sprey, H. and Baklanov, M. R.},
article_location = {UK Oxford},
article_number = {11},
doi = {http://dx.doi.org/10.1016/j.tsf.2011.01.339},
keywords = {Ellipsometry; Optical properties; Low-k dielectrics; Porosity; Porogen residues; Plasma damage},
language = {eng},
issn = {0040-6090},
journal = {Thin Solid Films},
title = {Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance},
volume = {519},
year = {2011}
}
TY - JOUR
ID - 938213
AU - Maršík, Přemysl - Urbanowicz, A. M. - Verdonck, P. - De Roest, D. - Sprey, H. - Baklanov, M. R.
PY - 2011
TI - Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance
JF - Thin Solid Films
VL - 519
IS - 11
SP - 3619-3626
EP - 3619-3626
PB - Elsevier science
SN - 00406090
KW - Ellipsometry
KW - Optical properties
KW - Low-k dielectrics
KW - Porosity
KW - Porogen residues
KW - Plasma damage
N2 - A set of SiCOH low dielectric constant films (low-k) has been deposited by plasma enhanced chemical vapor deposition using variable flow rates of the porogen (sacrificial phase) and matrix precursors. During the deposition, two different substrate temperatures and radio frequency power settings were applied. Next, the deposited films were cured by the UV assisted annealing (UV-cure) using two industrial UV light sources: a monochromatic UV source with intensity maximum at gimel = 172 nm (lamp A) and a broadband UV source with intensity spectrum distributed below 200 nm (lamp B). This set of various low-k films has been additionally exposed to NH3 plasma (used for the CuOx reduction during Cu/low-k integration) in order to evaluate the effect of the film preparation conditions on the plasma damage resistance of low-k material. Results show that the choice of the UV-curing light source has significant impact on the chemical composition of the low-k material and modifies the porogen removal efficiency and subsequently the material porosity. The 172 nm photons from lamp A induce greater changes to most of the evaluated properties, particularly causing undesired removal of Si-CH3 groups and their replacement with Si-H. The softer broadband radiation from lamp B improves the porogen removal efficiency, leaving less porogen residues detected by spectroscopic ellipsometry in UV range. Furthermore, it was found that the degree of bulk hydrophilization (plasma damage) after NH3 plasma exposure is driven mainly by the film porosity.
ER -
MARŠÍK, Přemysl, A. M. URBANOWICZ, P. VERDONCK, D. DE ROEST, H. SPREY a M. R. BAKLANOV. Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance. \textit{Thin Solid Films}. UK Oxford: Elsevier science, 2011, roč.~519, č.~11, s.~3619-3626. ISSN~0040-6090. Dostupné z: https://dx.doi.org/10.1016/j.tsf.2011.01.339.
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