Dielectric response and structure of amorphous hydrogenated
carbon films with nitrogen admixture

J 2011

Dielectric response and structure of amorphous hydrogenated carbon films with nitrogen admixture

ZAJÍČKOVÁ, Lenka, Daniel FRANTA, David NEČAS, Vilma BURŠÍKOVÁ, Mihai George MURESAN et. al.

Basic information

Original name

Dielectric response and structure of amorphous hydrogenated carbon films with nitrogen admixture

Authors

ZAJÍČKOVÁ, Lenka (203 Czech Republic, guarantor, belonging to the institution), Daniel FRANTA (203 Czech Republic, belonging to the institution), David NEČAS (203 Czech Republic, belonging to the institution), Vilma BURŠÍKOVÁ (203 Czech Republic, belonging to the institution), Mihai George MURESAN (642 Romania, belonging to the institution), Vratislav PEŘINA (203 Czech Republic, belonging to the institution) and Christoph COBET (276 Germany)

Edition

Thin Solid Films, Elsevier, 2011, 0040-6090

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

Netherlands

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 1.890

RIV identification code

RIV/00216224:14310/11:00049805

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1016/j.tsf.2011.02.021

UT WoS

000290187100030

Keywords in English

Diamond-like carbon; Amorphous hydrogenated carbon; Optical properties; Band structure

Abstract

V originále

The optical properties and structure of a-C:H films were modified by addition of nitrogen into the CH4/H2 deposition mixture. Three films prepared in capacitively coupled rf discharge were compared: (a) hydrogenated diamond like carbon film with hydrogen content of 34 % and indentation hardness of 21.7 GPa, (b) hard a-C:H:N film with nitrogen content of 13 % and indentation hardness of 18.5 GPa and (c) soft a-C:H:N film with nitrogen content of 10 % and indentation hardness of 6.7 GPa. It is shown how the parametrized density of states model describing dielectric response of electronic interband transitions can be applied to modified a-C:H:N and how it can be combined with correct treatment of transmittance measured in infrared range using additional Gaussian peaks in joint density of phonon states. This analysis resulted in determination of film dielectric function in wide spectral range (0.045-30 eV) and provided also information about the density of states of valence and conduction bands and lattice vibrations.

Links

FT-TA5/114, research and development project

Name: Vývoj technologie vytváření PECVD vrstev pro výrobu automobilové světelné techniky

Investor: Ministry of Industry and Trade of the CR, Development of technology of PECVD films formation for automotive lighting equipment

GA202/07/1669, research and development project

Name: Depozice termomechanicky stabilních nanostrukturovaných diamantu-podobných tenkých vrstev ve dvojfrekvenčních kapacitních výbojích

Investor: Czech Science Foundation, Deposition of thermomehanically stable nanostructured diamond-like thin films in dual frequency capacitive discharges

GD104/09/H080, research and development project

Name: Plazmochemické procesy a jejich technologické aplikace

Investor: Czech Science Foundation

MSM0021622411, plan (intention)

Name: Studium a aplikace plazmochemických reakcí v neizotermickém nízkoteplotním plazmatu a jeho interakcí s povrchem pevných látek

Investor: Ministry of Education, Youth and Sports of the CR, Study and application of plasma chemical reactions in non-isothermic low temperature plasma and its interaction with solid surface

Detailed Information on Publication Record