Detailed Information on Publication Record
2011
Dielectric response and structure of amorphous hydrogenated carbon films with nitrogen admixture
ZAJÍČKOVÁ, Lenka, Daniel FRANTA, David NEČAS, Vilma BURŠÍKOVÁ, Mihai George MURESAN et. al.Basic information
Original name
Dielectric response and structure of amorphous hydrogenated carbon films with nitrogen admixture
Authors
ZAJÍČKOVÁ, Lenka (203 Czech Republic, guarantor, belonging to the institution), Daniel FRANTA (203 Czech Republic, belonging to the institution), David NEČAS (203 Czech Republic, belonging to the institution), Vilma BURŠÍKOVÁ (203 Czech Republic, belonging to the institution), Mihai George MURESAN (642 Romania, belonging to the institution), Vratislav PEŘINA (203 Czech Republic, belonging to the institution) and Christoph COBET (276 Germany)
Edition
Thin Solid Films, Elsevier, 2011, 0040-6090
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10302 Condensed matter physics
Country of publisher
Netherlands
Confidentiality degree
není předmětem státního či obchodního tajemství
References:
Impact factor
Impact factor: 1.890
RIV identification code
RIV/00216224:14310/11:00049805
Organization unit
Faculty of Science
UT WoS
000290187100030
Keywords in English
Diamond-like carbon; Amorphous hydrogenated carbon; Optical properties; Band structure
Tags
International impact, Reviewed
Změněno: 27/3/2013 09:08, doc. Mgr. Lenka Zajíčková, Ph.D.
Abstract
V originále
The optical properties and structure of a-C:H films were modified by addition of nitrogen into the CH4/H2 deposition mixture. Three films prepared in capacitively coupled rf discharge were compared: (a) hydrogenated diamond like carbon film with hydrogen content of 34 % and indentation hardness of 21.7 GPa, (b) hard a-C:H:N film with nitrogen content of 13 % and indentation hardness of 18.5 GPa and (c) soft a-C:H:N film with nitrogen content of 10 % and indentation hardness of 6.7 GPa. It is shown how the parametrized density of states model describing dielectric response of electronic interband transitions can be applied to modified a-C:H:N and how it can be combined with correct treatment of transmittance measured in infrared range using additional Gaussian peaks in joint density of phonon states. This analysis resulted in determination of film dielectric function in wide spectral range (0.045-30 eV) and provided also information about the density of states of valence and conduction bands and lattice vibrations.
Links
| FT-TA5/114, research and development project |
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| GA202/07/1669, research and development project |
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| GD104/09/H080, research and development project |
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| MSM0021622411, plan (intention) |
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