| SCHÄFER, Jan, Stefan HORN, Rüdiger FOEST, Ronny BRANDENBURG, Petr VAŠINA a Klaus-Dieter WELTMANN. Complex analysis of SiOxCyHz films deposited by an atmospheric pressure dielectric barrier discharge. Surface & Coatings Technology. Elsevier Science, roč. 205, 25.7.2011, s. "S330"-"S334", 5 s. ISSN 0257-8972. doi:10.1016/j.surfcoat.2011.03.124. 2011. |
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@article{947592,
author = {Schäfer, Jan and Horn, Stefan and Foest, Rüdiger and Brandenburg, Ronny and Vašina, Petr and Weltmann, KlausandDieter},
article_number = {25.7.2011},
doi = {http://dx.doi.org/10.1016/j.surfcoat.2011.03.124},
keywords = {SILVER NANOPARTICLES; PLASMA; JET},
language = {eng},
issn = {0257-8972},
journal = {Surface & Coatings Technology},
title = {Complex analysis of SiOxCyHz films deposited by an atmospheric pressure dielectric barrier discharge},
volume = {205},
year = {2011}
}
TY - JOUR
ID - 947592
AU - Schäfer, Jan - Horn, Stefan - Foest, Rüdiger - Brandenburg, Ronny - Vašina, Petr - Weltmann, Klaus-Dieter
PY - 2011
TI - Complex analysis of SiOxCyHz films deposited by an atmospheric pressure dielectric barrier discharge
JF - Surface & Coatings Technology
VL - 205
IS - 25.7.2011
SP - "S330"-"S334"
EP - "S330"-"S334"
PB - Elsevier Science
SN - 02578972
KW - SILVER NANOPARTICLES
KW - PLASMA
KW - JET
N2 - SiOx films are deposited with an atmospheric pressure dielectric barrier discharge (apDBD) using Ar, O2 and different precursor gases (HMDSO and Silane).An experimental study on the influence of the discharge operation parameters on the chemical composition of the deposited films and the vertical structure over the film thickness is carried out by means of SEM, EDX, and ATR–FTIR.
ER -
SCHÄFER, Jan, Stefan HORN, Rüdiger FOEST, Ronny BRANDENBURG, Petr VAŠINA a Klaus-Dieter WELTMANN. Complex analysis of SiOxCyHz films deposited by an atmospheric pressure dielectric barrier discharge. \textit{Surface \&{} Coatings Technology}. Elsevier Science, roč.~205, 25.7.2011, s.~''S330''-''S334'', 5 s. ISSN~0257-8972. doi:10.1016/j.surfcoat.2011.03.124. 2011.
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