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@proceedings{953493, author = {Skácelová, Dana and Haničinec, Martin and Sťahel, Pavel and Černák, Mirko}, keywords = {Atmospheric pressure plasma DCSBD crystalline silicon wafer plasma activation plasma etching wettability}, language = {eng}, title = {Effect of plasma treatment on the surface morphology and wettability of (111) and (100) silicon wafers}, year = {2011} }
TY - CONF ID - 953493 AU - Skácelová, Dana - Haničinec, Martin - Sťahel, Pavel - Černák, Mirko PY - 2011 TI - Effect of plasma treatment on the surface morphology and wettability of (111) and (100) silicon wafers KW - Atmospheric pressure plasma DCSBD crystalline silicon wafer plasma activation plasma etching wettability N2 - This paper is focused on the plasma treatment of silicon surface. The effect of plasma treatment in dependence of the different crystallographic orientation of silicon surface,(100) plane and (111) plane is compare ER -
SKÁCELOVÁ, Dana, Martin HANIČINEC, Pavel SŤAHEL and Mirko ČERNÁK. \textit{Effect of plasma treatment on the surface morphology and wettability of (111) and (100) silicon wafers}. 2011.
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