SKÁCELOVÁ, Dana, Martin HANIČINEC, Pavel SŤAHEL and Mirko ČERNÁK. Effect of plasma treatment on the surface morphology and wettability of (111) and (100) silicon wafers. 2011.
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Basic information
Original name Effect of plasma treatment on the surface morphology and wettability of (111) and (100) silicon wafers
Name in Czech Efekt plazmové úpravy na morfologii a smáčivost povrchů křemíku (111) a (100)
Authors SKÁCELOVÁ, Dana (203 Czech Republic, guarantor), Martin HANIČINEC (203 Czech Republic, belonging to the institution), Pavel SŤAHEL (203 Czech Republic, belonging to the institution) and Mirko ČERNÁK (703 Slovakia, belonging to the institution).
Edition 2011.
Other information
Original language English
Type of outcome Conference abstract
Field of Study 10305 Fluids and plasma physics
Country of publisher Romania
Confidentiality degree is not subject to a state or trade secret
RIV identification code RIV/00216224:14310/11:00053531
Organization unit Faculty of Science
Keywords (in Czech) Atmosférické plazma DCSBD krystalický křemík aktivace smáčivost
Keywords in English Atmospheric pressure plasma DCSBD crystalline silicon wafer plasma activation plasma etching wettability
Changed by Changed by: doc. Mgr. Pavel Sťahel, Ph.D., učo 6599. Changed: 18/1/2012 09:22.
Abstract
This paper is focused on the plasma treatment of silicon surface. The effect of plasma treatment in dependence of the different crystallographic orientation of silicon surface,(100) plane and (111) plane is compare
Links
MSM0021622411, plan (intention)Name: Studium a aplikace plazmochemických reakcí v neizotermickém nízkoteplotním plazmatu a jeho interakcí s povrchem pevných látek
Investor: Ministry of Education, Youth and Sports of the CR, Study and application of plasma chemical reactions in non-isothermic low temperature plasma and its interaction with solid surface
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