| HOSPODKOVÁ, Alice, J. PANGRÁC, J. VYSKOČIL, J. OSWALD, A. VETUSHKA, Ondřej CAHA, P. HAZDRA, K. KULDOVÁ a E. HULICIUS. InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime. Journal of crystal growth. Amsterdam: Elsevier Science, roč. 317, č. 1, s. 39-42. ISSN 0022-0248. doi:10.1016/j.jcrysgro.2010.12.076. 2011. |
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@article{964350,
author = {Hospodková, Alice and Pangrác, J. and Vyskočil, J. and Oswald, J. and Vetushka, A. and Caha, Ondřej and Hazdra, P. and Kuldová, K. and Hulicius, E.},
article_location = {Amsterdam},
article_number = {1},
doi = {http://dx.doi.org/10.1016/j.jcrysgro.2010.12.076},
keywords = {Low dimensional structures; Photoluminescence; Low-pressure metalorganic vapor phase epitaxy; InAs/GaAs quantum dots; Semiconducting III-V materials},
language = {eng},
issn = {0022-0248},
journal = {Journal of crystal growth},
title = {InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime},
volume = {317},
year = {2011}
}
TY - JOUR
ID - 964350
AU - Hospodková, Alice - Pangrác, J. - Vyskočil, J. - Oswald, J. - Vetushka, A. - Caha, Ondřej - Hazdra, P. - Kuldová, K. - Hulicius, E.
PY - 2011
TI - InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime
JF - Journal of crystal growth
VL - 317
IS - 1
SP - 39-42
EP - 39-42
PB - Elsevier Science
SN - 00220248
KW - Low dimensional structures
KW - Photoluminescence
KW - Low-pressure metalorganic vapor phase epitaxy
KW - InAs/GaAs quantum dots
KW - Semiconducting III-V materials
N2 - InAs/GaAs quantum dot (QD) properties can be significantly influenced by the growth conditions of the QD capping layer. We have studied the effect of a group III partial pressure in the reactor on the QD capping process and on the QD photoluminescence when the capping layer is grown under the kinetically limited regime. Two types of capping layers were prepared: GaAs and InGaAs. The GaAs capping layer growth rate decrease did not influence QD dissolution, but increased the dissolution of big hillocks. Influence of the GaAs capping layer thickness on QD photoluminescence is also demonstrated. The composition of the ternary strain reducing InGaAs capping layer can be considerably changed depending on the V/III ratio under kinetically limited growth.
ER -
HOSPODKOVÁ, Alice, J. PANGRÁC, J. VYSKOČIL, J. OSWALD, A. VETUSHKA, Ondřej CAHA, P. HAZDRA, K. KULDOVÁ a E. HULICIUS. InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime. \textit{Journal of crystal growth}. Amsterdam: Elsevier Science, roč.~317, č.~1, s.~39-42. ISSN~0022-0248. doi:10.1016/j.jcrysgro.2010.12.076. 2011.
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