PIANO, S., X. MARTI, A. W. RUSHFORTH, K. W. EDMONDS, R. P. CAMPION, M. WANG, Ondřej CAHA, T. U. SHUELLI, Václav HOLÝ and B. L. GALLAGHER. Surface morphology and magnetic anisotropy in (Ga,Mn)As. Applied Physics Letters. USA: American Institute of Physics, 2011, vol. 98, No 15, p. "nestránkováno", 3 pp. ISSN 0003-6951. Available from: https://dx.doi.org/10.1063/1.3579534.
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Basic information
Original name Surface morphology and magnetic anisotropy in (Ga,Mn)As
Name in Czech Morfologie povrchu a magnetická anizotropie v (Ga,Mn)As
Authors PIANO, S. (826 United Kingdom of Great Britain and Northern Ireland), X. MARTI (724 Spain), A. W. RUSHFORTH (826 United Kingdom of Great Britain and Northern Ireland), K. W. EDMONDS (826 United Kingdom of Great Britain and Northern Ireland), R. P. CAMPION (826 United Kingdom of Great Britain and Northern Ireland), M. WANG (826 United Kingdom of Great Britain and Northern Ireland), Ondřej CAHA (203 Czech Republic), T. U. SHUELLI (276 Germany), Václav HOLÝ (203 Czech Republic, guarantor, belonging to the institution) and B. L. GALLAGHER (826 United Kingdom of Great Britain and Northern Ireland).
Edition Applied Physics Letters, USA, American Institute of Physics, 2011, 0003-6951.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher United States of America
Confidentiality degree is not subject to a state or trade secret
Impact factor Impact factor: 3.844
RIV identification code RIV/00216224:14310/11:00057230
Organization unit Faculty of Science
Doi http://dx.doi.org/10.1063/1.3579534
UT WoS 000289580800039
Keywords (in Czech) Mikroskopie atomové síly; feromagnetocké materiály; GaAs; III-V polovodiče
Keywords in English atomic force microscopy; ferromagnetic materials; gallium arsenide; III-V semiconductors
Tags AKR, rivok
Tags International impact, Reviewed
Changed by Changed by: Ing. Andrea Mikešková, učo 137293. Changed: 12/4/2013 10:33.
Abstract
Atomic force microscopy and grazing incidence x-ray diffraction measurements have revealed the presence of ripples, aligned along the [1 -1 0] direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with periodicity of about 50 nm in all samples that have been studied. These samples show the strong symmetry breaking uniaxial magnetic anisotropy normally observed in such materials. We observe a clear correlation between the amplitude of the surface ripples and the strength of the uniaxial magnetic anisotropy component suggesting that these ripples might be the source of such anisotropy.
Abstract (in Czech)
Mikroskopie atomové síly a grazing-incidence rtg difrakce ukázaly přítomnost zvlněného povrchu (Ga,Mn)As vrstev rostlých na GaAs (001) s periodou asi 50 nm orientovaných ve směru [1 -1 0].
Links
GP202/09/P410, research and development projectName: Řízení elastického napětí v magnetických polovodičích
Investor: Czech Science Foundation, Strain engineering in diluted magnetic semiconductors
MSM0021622410, plan (intention)Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures
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