Detailed Information on Publication Record
2011
Mechanical Properties of Ultrananocrystalline Thin Films Deposited Using Dual Frequency Discharges
BURŠÍKOVÁ, Vilma, Olga BLÁHOVÁ, Monika KARÁSKOVÁ, Lenka ZAJÍČKOVÁ, Ondřej JAŠEK et. al.Basic information
Original name
Mechanical Properties of Ultrananocrystalline Thin Films Deposited Using Dual Frequency Discharges
Name in Czech
Mechanické vlastnosti ultrananokrystalickýh tenkých vrstev deponovaných pomocí dvoufrekvenčního výboje
Authors
BURŠÍKOVÁ, Vilma (203 Czech Republic, belonging to the institution), Olga BLÁHOVÁ (203 Czech Republic), Monika KARÁSKOVÁ (203 Czech Republic, guarantor, belonging to the institution), Lenka ZAJÍČKOVÁ (203 Czech Republic, belonging to the institution), Ondřej JAŠEK (203 Czech Republic, belonging to the institution), Daniel FRANTA (203 Czech Republic, belonging to the institution), Petr KLAPETEK (203 Czech Republic) and Jiří BURŠÍK (203 Czech Republic)
Edition
CHEMICKÉ LISTY, Praha, Česká společnost chemická, 2011, 0009-2770
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10305 Fluids and plasma physics
Country of publisher
Czech Republic
Confidentiality degree
není předmětem státního či obchodního tajemství
References:
Impact factor
Impact factor: 0.529
RIV identification code
RIV/00216224:14310/11:00049530
Organization unit
Faculty of Science
UT WoS
000308670500002
Keywords (in Czech)
ultrananokrystalický diamand; plasmatem iniciovaná depozice z plynné fáze; dvoufrekvenční výboj; lokální mechanické vlastnosti
Keywords in English
ultrananocrystalline diamond; plasma enhanced chemical vapor deposition; dual frequency discharge; local mechanical properties
Tags
International impact, Reviewed
Změněno: 14/3/2014 10:21, doc. Mgr. Lenka Zajíčková, Ph.D.
V originále
The present paper describes the deposition of nanostruc- tured diamond films with low surface roughness, high hard- ness and fracture toughness by microwave PECVD in the ASTeX type reactor from mixture of methane and hydrogen. Films were deposited on a mirror polished (111) oriented n- doped silicon substrate. The film exhibited relatively low roughness, the root mean square (RMS) of heights ranged from 20 to 9.1 nm, depending on the deposition conditions. The hardness was found to be in the range from 22 to 65 GPa and the elastic modulus ranged from 220 to 375 GPa, depend- ing on the film structure
In Czech
Práce popisuje depozici nanostrukturních diamantových vrstev s nízkou povrchovou drsností, vysokou tvrdostí a odolností vůči zlomu. Ta byla prováděna metodou mikrovlného PECVD v reaktoru typu ASTeX. Užitými plyny byly vodík a metan
Links
GA202/07/1669, research and development project |
| ||
KAN311610701, research and development project |
| ||
MSM0021622411, plan (intention) |
|