| HARTMANOVÁ, Maria, Vladislav NAVRÁTIL, Vilma BURŠÍKOVÁ, František KUNDRACIK a C. MANSILLA. Effect of crystallographic structure on electrical and mechanical characteristics of Sm2O3-Doped CeO2 films. Russian Journal of Electrochemistry. Pleiades Publishing, Ltd., 2011, roč. 47, č. 5, s. 505–516. ISSN 1023-1935. |
Další formáty:
BibTeX
LaTeX
RIS
@article{966985,
author = {Hartmanová, Maria and Navrátil, Vladislav and Buršíková, Vilma and Kundracik, František and Mansilla, C.},
article_number = {5},
keywords = {CeO2 ; Sm2O3 ; e-beam evaporation ; ionic beam assisted deposition ; impedance spectroscopy ; indentation technique ; electrical conductivity ; dielectric permittivity ; microhardness ;},
language = {eng},
issn = {1023-1935},
journal = {Russian Journal of Electrochemistry},
title = {Effect of crystallographic structure on electrical and mechanical characteristics of Sm2O3-Doped CeO2 films},
volume = {47},
year = {2011}
}
TY - JOUR
ID - 966985
AU - Hartmanová, Maria - Navrátil, Vladislav - Buršíková, Vilma - Kundracik, František - Mansilla, C.
PY - 2011
TI - Effect of crystallographic structure on electrical and mechanical characteristics of Sm2O3-Doped CeO2 films
JF - Russian Journal of Electrochemistry
VL - 47
IS - 5
SP - 505–516
EP - 505–516
PB - Pleiades Publishing, Ltd.
SN - 10231935
KW - CeO2
KW - Sm2O3
KW - e-beam evaporation
KW - ionic beam assisted deposition
KW - impedance spectroscopy
KW - indentation technique
KW - electrical conductivity
KW - dielectric permittivity
KW - microhardness ;
N2 - Electrical conductivity, dielectric permittivity and mechanical hardness of the polycrystalline CeO2 + xSm2O3 (x = 0, 10.9-15.9 mol %) films prepared by Electron Beam Physical Vapour Deposition (EB-PVD) and Ionic Beam Assisted Deposition, (IBAD), techniques were investigated in dependence on their structure and microstructure influenced by the deposition conditions, namely composition, deposition temperature and Ar+ ion bombardment. The electrical conductivity of doped ceria prepared without Ar+ ion bombardment and investigated by the impedance spectroscopy, IS, was found to be predominantly ionic one under the oxidizing atmosphere/low-temperature conditions and the higher amounts of Sm2O3 (>10 mol %) used. The bulk conductivity as a part of total measured conductivity was a subject of interest because the grain boundary conductivity was found to be 3 orders of magnitude lower than the corresponding bulk conductivity. Ar+ ion bombardment acted as a reducer (Ce4+ -> Ce3+) resulting in the development of electronic conductivity. Dielectric permittivity determined from the bulk parallel capacitance measured at room temperature and the frequency of 1 MHz, similarly as the mechanical hardness measured by indentation (classical Vickers and Depth Sensing Indentation-DSI) techniques were also found to be dependent on the deposition conditions. The approximative value of hardness for the investigated films deposited on the substrate was estimated using a simple phenomenological model described by the power function HV = HV0 + aPb and compared with the so-called apparent hardness (substrate + investigated film) determined by the classical Vickers formula. Results obtained are analyzed and discussed.
ER -
HARTMANOVÁ, Maria, Vladislav NAVRÁTIL, Vilma BURŠÍKOVÁ, František KUNDRACIK a C. MANSILLA. Effect of crystallographic structure on electrical and mechanical characteristics of Sm2O3-Doped CeO2 films. \textit{Russian Journal of Electrochemistry}. Pleiades Publishing, Ltd., 2011, roč.~47, č.~5, s.~505–516. ISSN~1023-1935.
|
