Nucleation of lateral compositional modulation in InGaP
epitaxial films grown on (001) GaAs

J 2012

Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs

SCHMIDBAUER, Martin; Asli UGUR; C. WOLLSTEIN; Fariba HATAMI; Ferhat KATMIS et. al.

Basic information

Original name

Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs

Name in Czech

Vznik laterální modulace chemického složení v epitaxních vrstvách InGaP rostlých na (001) GaAs

Authors

SCHMIDBAUER, Martin (276 Germany); Asli UGUR (276 Germany); C. WOLLSTEIN (276 Germany); Fariba HATAMI (276 Germany); Ferhat KATMIS (276 Germany); Ondřej CAHA (203 Czech Republic, guarantor, belonging to the institution) and W. T. MASSELINK (276 Germany)

Edition

Journal of Applied Physics, Melville, USA, American Institute of Physics, 2012, 0021-8979

Other information

Language

English

Type of outcome

Article in a journal

Field of Study

10302 Condensed matter physics

Country of publisher

United States of America

Confidentiality degree

is not subject to a state or trade secret

References:

URL

Impact factor

Impact factor: 2.210

RIV identification code

RIV/00216224:14740/12:00057272

Organization unit

Central European Institute of Technology

DOI

https://doi.org/10.1063/1.3677995

UT WoS

000299792400075

Keywords (in Czech)

vrstvy; GaInP; tečky

Keywords in English

LAYERS; ENHANCEMENT; GAINP; DOTS

Abstract

ORIG CZ

In the original language

The nucleation of the one dimensional periodic surface corrugations that form during epitaxy along the [-110] direction on the In0.48Ga0.52 P lattice matched to (001) GaAs is investigated using x-ray diffuse scattering in the grazing incidence geometry.

In Czech

Nukleace jednorozměrné periodické struktury v GaInP vrstvách byla studována pomocí grazing=incidence rtg difrakce.

Links

GP202/09/P410, research and development project

Name: Řízení elastického napětí v magnetických polovodičích

Investor: Czech Science Foundation, Strain engineering in diluted magnetic semiconductors

MSM0021622410, plan (intention)

Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur

Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures

MUNI/A/1047/2009, interní kód MU

Name: Struktura, elektronová struktura a optická odezva pokročilých materiálů

Investor: Masaryk University, Category A

Cite

SCHMIDBAUER, Martin; Asli UGUR; C. WOLLSTEIN; Fariba HATAMI; Ferhat KATMIS; Ondřej CAHA and W. T. MASSELINK. Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs. Journal of Applied Physics. Melville, USA: American Institute of Physics, 2012, vol. 111, No 2, p. "nestránkováno", 5 pp. ISSN 0021-8979. Available from: https://doi.org/10.1063/1.3677995.

@article{972558,
   author = {Schmidbauer, Martin and Ugur, Asli and Wollstein, C. and Hatami, Fariba and Katmis, Ferhat and Caha, Ondřej and Masselink, W. T.},
   article_location = {Melville, USA},
   article_number = {2},
   doi = {https://doi.org/10.1063/1.3677995},
   keywords = {LAYERS; ENHANCEMENT; GAINP; DOTS},
   language = {eng},
   issn = {0021-8979},
   journal = {Journal of Applied Physics},
   title = {Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs},
   url = {http://jap.aip.org/resource/1/japiau/v111/i2/p024306_s1?isAuthorized=no},
   volume = {111},
   year = {2012}
}

TY  - JOUR
ID  - 972558
AU  - Schmidbauer, Martin - Ugur, Asli - Wollstein, C. - Hatami, Fariba - Katmis, Ferhat - Caha, Ondřej - Masselink, W. T.
PY  - 2012
TI  - Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs
JF  - Journal of Applied Physics
VL  - 111
IS  - 2
SP  - "nestránkováno"
EP  - "nestránkováno"
PB  - American Institute of Physics
SN  - 00218979
KW  - LAYERS
KW  - ENHANCEMENT
KW  - GAINP
KW  - DOTS
UR  - http://jap.aip.org/resource/1/japiau/v111/i2/p024306_s1?isAuthorized=no
L2  - http://jap.aip.org/resource/1/japiau/v111/i2/p024306_s1?isAuthorized=no
N2  - The nucleation of the one dimensional periodic surface corrugations that form during epitaxy along the [-110] direction on the In0.48Ga0.52 P lattice matched to (001) GaAs is investigated using x-ray diffuse scattering in the grazing incidence geometry.
ER  -

SCHMIDBAUER, Martin; Asli UGUR; C. WOLLSTEIN; Fariba HATAMI; Ferhat KATMIS; Ondřej CAHA and W. T. MASSELINK. Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs. \textit{Journal of Applied Physics}. Melville, USA: American Institute of Physics, 2012, vol.~111, No~2, p.~''nestránkováno'', 5 pp. ISSN~0021-8979. Available from: https://doi.org/10.1063/1.3677995.

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