| SCHMIDBAUER, Martin, Asli UGUR, C. WOLLSTEIN, Fariba HATAMI, Ferhat KATMIS, Ondřej CAHA and W. T. MASSELINK. Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs. Journal of Applied Physics. Melville, USA: American Institute of Physics, 2012, vol. 111, No 2, p. "nestránkováno", 5 pp. ISSN 0021-8979. Available from: https://dx.doi.org/10.1063/1.3677995. |
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@article{972558,
author = {Schmidbauer, Martin and Ugur, Asli and Wollstein, C. and Hatami, Fariba and Katmis, Ferhat and Caha, Ondřej and Masselink, W. T.},
article_location = {Melville, USA},
article_number = {2},
doi = {http://dx.doi.org/10.1063/1.3677995},
keywords = {LAYERS; ENHANCEMENT; GAINP; DOTS},
language = {eng},
issn = {0021-8979},
journal = {Journal of Applied Physics},
title = {Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs},
url = {http://jap.aip.org/resource/1/japiau/v111/i2/p024306_s1?isAuthorized=no},
volume = {111},
year = {2012}
}
TY - JOUR
ID - 972558
AU - Schmidbauer, Martin - Ugur, Asli - Wollstein, C. - Hatami, Fariba - Katmis, Ferhat - Caha, Ondřej - Masselink, W. T.
PY - 2012
TI - Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs
JF - Journal of Applied Physics
VL - 111
IS - 2
SP - "nestránkováno"
EP - "nestránkováno"
PB - American Institute of Physics
SN - 00218979
KW - LAYERS
KW - ENHANCEMENT
KW - GAINP
KW - DOTS
UR - http://jap.aip.org/resource/1/japiau/v111/i2/p024306_s1?isAuthorized=no
L2 - http://jap.aip.org/resource/1/japiau/v111/i2/p024306_s1?isAuthorized=no
N2 - The nucleation of the one dimensional periodic surface corrugations that form during epitaxy along the [-110] direction on the In0.48Ga0.52 P lattice matched to (001) GaAs is investigated using x-ray diffuse scattering in the grazing incidence geometry.
ER -
SCHMIDBAUER, Martin, Asli UGUR, C. WOLLSTEIN, Fariba HATAMI, Ferhat KATMIS, Ondřej CAHA and W. T. MASSELINK. Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs. \textit{Journal of Applied Physics}. Melville, USA: American Institute of Physics, 2012, vol.~111, No~2, p.~''nestránkováno'', 5 pp. ISSN~0021-8979. Available from: https://dx.doi.org/10.1063/1.3677995.
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