Nucleation of lateral compositional modulation in InGaP
epitaxial films grown on (001) GaAs

J 2012

Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs

SCHMIDBAUER, Martin, Asli UGUR, C. WOLLSTEIN, Fariba HATAMI, Ferhat KATMIS et. al.

Basic information

Original name

Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs

Name in Czech

Vznik laterální modulace chemického složení v epitaxních vrstvách InGaP rostlých na (001) GaAs

Authors

SCHMIDBAUER, Martin (276 Germany), Asli UGUR (276 Germany), C. WOLLSTEIN (276 Germany), Fariba HATAMI (276 Germany), Ferhat KATMIS (276 Germany), Ondřej CAHA (203 Czech Republic, guarantor, belonging to the institution) and W. T. MASSELINK (276 Germany)

Edition

Journal of Applied Physics, Melville, USA, American Institute of Physics, 2012, 0021-8979

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

United States of America

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 2.210

RIV identification code

RIV/00216224:14740/12:00057272

Organization unit

Central European Institute of Technology

DOI

http://dx.doi.org/10.1063/1.3677995

UT WoS

000299792400075

Keywords (in Czech)

vrstvy; GaInP; tečky

Keywords in English

LAYERS; ENHANCEMENT; GAINP; DOTS

Abstract

ORIG CZ

V originále

The nucleation of the one dimensional periodic surface corrugations that form during epitaxy along the [-110] direction on the In0.48Ga0.52 P lattice matched to (001) GaAs is investigated using x-ray diffuse scattering in the grazing incidence geometry.

In Czech

Nukleace jednorozměrné periodické struktury v GaInP vrstvách byla studována pomocí grazing=incidence rtg difrakce.

Links

GP202/09/P410, research and development project

Name: Řízení elastického napětí v magnetických polovodičích

Investor: Czech Science Foundation, Strain engineering in diluted magnetic semiconductors

MSM0021622410, plan (intention)

Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur

Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures

MUNI/A/1047/2009, interní kód MU

Name: Struktura, elektronová struktura a optická odezva pokročilých materiálů

Investor: Masaryk University, Category A

Citovat

SCHMIDBAUER, Martin, Asli UGUR, C. WOLLSTEIN, Fariba HATAMI, Ferhat KATMIS, Ondřej CAHA and W. T. MASSELINK. Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs. Journal of Applied Physics. Melville, USA: American Institute of Physics, 2012, vol. 111, No 2, p. "nestránkováno", 5 pp. ISSN 0021-8979. Available from: https://dx.doi.org/10.1063/1.3677995.

@article{972558,
   author = {Schmidbauer, Martin and Ugur, Asli and Wollstein, C. and Hatami, Fariba and Katmis, Ferhat and Caha, Ondřej and Masselink, W. T.},
   article_location = {Melville, USA},
   article_number = {2},
   doi = {http://dx.doi.org/10.1063/1.3677995},
   keywords = {LAYERS; ENHANCEMENT; GAINP; DOTS},
   language = {eng},
   issn = {0021-8979},
   journal = {Journal of Applied Physics},
   title = {Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs},
   url = {http://jap.aip.org/resource/1/japiau/v111/i2/p024306_s1?isAuthorized=no},
   volume = {111},
   year = {2012}
}

TY  - JOUR
ID  - 972558
AU  - Schmidbauer, Martin - Ugur, Asli - Wollstein, C. - Hatami, Fariba - Katmis, Ferhat - Caha, Ondřej - Masselink, W. T.
PY  - 2012
TI  - Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs
JF  - Journal of Applied Physics
VL  - 111
IS  - 2
SP  - "nestránkováno"
EP  - "nestránkováno"
PB  - American Institute of Physics
SN  - 00218979
KW  - LAYERS
KW  - ENHANCEMENT
KW  - GAINP
KW  - DOTS
UR  - http://jap.aip.org/resource/1/japiau/v111/i2/p024306_s1?isAuthorized=no
L2  - http://jap.aip.org/resource/1/japiau/v111/i2/p024306_s1?isAuthorized=no
N2  - The nucleation of the one dimensional periodic surface corrugations that form during epitaxy along the [-110] direction on the In0.48Ga0.52 P lattice matched to (001) GaAs is investigated using x-ray diffuse scattering in the grazing incidence geometry.
ER  -

SCHMIDBAUER, Martin, Asli UGUR, C. WOLLSTEIN, Fariba HATAMI, Ferhat KATMIS, Ondřej CAHA and W. T. MASSELINK. Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs. \textit{Journal of Applied Physics}. Melville, USA: American Institute of Physics, 2012, vol.~111, No~2, p.~''nestránkováno'', 5 pp. ISSN~0021-8979. Available from: https://dx.doi.org/10.1063/1.3677995.

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