J 2009

Hydrogenation of platinum introduced in silicon by radiation enhanced diffusion

HAZDRA, Pavel, Volodymyr KOMARNITSKYY and Vilma BURŠÍKOVÁ

Basic information

Original name

Hydrogenation of platinum introduced in silicon by radiation enhanced diffusion

Authors

HAZDRA, Pavel (203 Czech Republic, guarantor), Volodymyr KOMARNITSKYY (804 Ukraine) and Vilma BURŠÍKOVÁ (203 Czech Republic, belonging to the institution)

Edition

Materials Science and Engineering, Lausanne, ELSEVIER SCIENCE SA, 2009, 0921-5107

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

20201 Electrical and electronic engineering

Country of publisher

Netherlands

Confidentiality degree

není předmětem státního či obchodního tajemství

Impact factor

Impact factor: 1.715

RIV identification code

RIV/00216224:14310/09:00056770

Organization unit

Faculty of Science

DOI

UT WoS

000267635500081

Keywords (in Czech)

difúze; hydrogenace; platina ; křemík

Keywords in English

diffusion; hydrogenation; platinum; silicon

Tags

Změněno: 20/4/2012 12:18, Ing. Andrea Mikešková

Abstract

ORIG CZ

V originále

The paper deals with hydrogenation of platinum atoms introduced in silicon by radiation enhanced diffusion. The interaction of defects and arising deep levels are investigated by means of deep level transient spectroscopy.

In Czech

Článek je zaměřen na hydrogenaci atomů platina v křemíku pomocí radiačně podporované difúze. Defekty jsou studovány zejména pomocí deep level transient spectroscopy.

Links

MSM0021622411, plan (intention)
Name: Studium a aplikace plazmochemických reakcí v neizotermickém nízkoteplotním plazmatu a jeho interakcí s povrchem pevných látek
Investor: Ministry of Education, Youth and Sports of the CR, Study and application of plasma chemical reactions in non-isothermic low temperature plasma and its interaction with solid surface