| KLENOVSKÝ, Petr, Moritz BREHM, Vlastimil KŘÁPEK, Elisabeth LAUSECKER, Dominik MUNZAR, Florian HACKL, Hubert STEINER, Thomas FROMHERZ, Günther BAUER and Josef HUMLÍČEK. Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition. Online. Physical Review B. USA: The American Physical Society, 2012, vol. 86, No 11, p. "nestránkováno", 8 pp. ISSN 1098-0121. Available from: https://dx.doi.org/10.1103/PhysRevB.86.115305. [citováno 2024-04-23] |
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@article{991659,
author = {Klenovský, Petr and Brehm, Moritz and Křápek, Vlastimil and Lausecker, Elisabeth and Munzar, Dominik and Hackl, Florian and Steiner, Hubert and Fromherz, Thomas and Bauer, Günther and Humlíček, Josef},
article_location = {USA},
article_number = {11},
doi = {http://dx.doi.org/10.1103/PhysRevB.86.115305},
keywords = {quantum dots; SiGe; photoluminescence; excitonic structure; biexciton},
language = {eng},
issn = {1098-0121},
journal = {Physical Review B},
title = {Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition},
url = {http://link.aps.org/doi/10.1103/PhysRevB.86.115305},
volume = {86},
year = {2012}
}
TY - JOUR
ID - 991659
AU - Klenovský, Petr - Brehm, Moritz - Křápek, Vlastimil - Lausecker, Elisabeth - Munzar, Dominik - Hackl, Florian - Steiner, Hubert - Fromherz, Thomas - Bauer, Günther - Humlíček, Josef
PY - 2012
TI - Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition
JF - Physical Review B
VL - 86
IS - 11
SP - "nestránkováno"
EP - "nestránkováno"
PB - The American Physical Society
SN - 10980121
KW - quantum dots
KW - SiGe
KW - photoluminescence
KW - excitonic structure
KW - biexciton
UR - http://link.aps.org/doi/10.1103/PhysRevB.86.115305
L2 - http://link.aps.org/doi/10.1103/PhysRevB.86.115305
N2 - The pumping intensity (I) dependence of the photoluminescence (PL) spectra of perfectly laterally two-dimensionally ordered SiGe quantum dots on Si(001) substrates was studied. The PL results from recombinations of holes localized in the SiGe quantum dots and electrons localized due to the strain field in the surrounding Si matrix. The analysis of the spectra revealed several distinct bands, attributed to phonon-assisted recombination and no-phonon recombination of the excitonic ground state and of the excited excitonic states, which all exhibit a linear I dependence of the PL intensity. At approximately I larger than 3 W cm-2, additional bands with a nearly quadratic I dependence appear in the PL spectra, resulting from biexcitonic transitions. These emerging PL contributions shift the composite no-phonon PL band of the SiGe quantum dots to higher energies. The experimentally obtained energies of the no-phonon transitions are in good agreement with the exciton and biexciton energies calculated using the envelope function approximation and the configuration interaction method.
ER -
KLENOVSKÝ, Petr, Moritz BREHM, Vlastimil KŘÁPEK, Elisabeth LAUSECKER, Dominik MUNZAR, Florian HACKL, Hubert STEINER, Thomas FROMHERZ, Günther BAUER and Josef HUMLÍČEK. Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition. Online. \textit{Physical Review B}. USA: The American Physical Society, 2012, vol.~86, No~11, p.~''nestránkováno'', 8 pp. ISSN~1098-0121. Available from: https://dx.doi.org/10.1103/PhysRevB.86.115305. [citováno 2024-04-23]
|
