ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS

HUMLÍČEK, Josef, Petr KLENOVSKÝ and Dominik MUNZAR. ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS. In 3rd International Conference on NANOCON. SLEZSKA: TANGER LTD. p. 39-44. ISBN 978-80-87294-27-7. 2011.

Basic information

• Original name: ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS
• Authors: HUMLÍČEK, Josef (203 Czech Republic, guarantor, belonging to the institution), Petr KLENOVSKÝ (203 Czech Republic, belonging to the institution) and Dominik MUNZAR (203 Czech Republic, belonging to the institution).
• Edition: SLEZSKA, 3rd International Conference on NANOCON, p. 39-44, 6 pp. 2011.
• Publisher: TANGER LTD

Other information

• Original language: English
• Type of outcome: Proceedings paper
• Field of Study: 10302 Condensed matter physics
• Country of publisher: Czech Republic
• Confidentiality degree: is not subject to a state or trade secret
• Publication form: storage medium (CD, DVD, flash disk)
• RIV identification code: RIV/00216224:14740/11:00057585
• Organization unit: Central European Institute of Technology
• ISBN: 978-80-87294-27-7
• UT WoS: 000306686700005
• Keywords in English: quantum dots; GaAs; InAs; GaAsSb
• Tags: ok
• Tags: International impact, Reviewed

Abstract

The electronic structure of InAs quantum dots (QD) self assembled on GaAs and covered with the GaAs(1-y) Sb(y) strain reducing layer displays several interesting features, depending on the geometry and the composition of the ternary material. The basic motivation is the possible lowering of the emission energy towards the prominent communication bands of 1.3 and 1.55 microns. Using the envelope function theory, we investigate the localization of electrons and holes. The most remarkable finding is the localization of holes outside InAs, close to the base of the dot, for larger value of the Sb content. Thus, typeII molecular-like states are formed as the results of the strain and piezoelectric fields. The parameters of the ternary layer play a crucial role in forming the properties of the QD structures; some of them cannot be easily obtained by X-ray techniques. For this reason, we explore the possibility of efficient characterization of the very thin ternary layers in the QD heterostructures using VIS-UV reflectance spectra, and compare the results with those obtained by using X-rays.

Links

• GA202/09/0676, research and development project: Name: Vliv krycích vrstev na elektronové stavy v kvantových tečkách

Investor: Czech Science Foundation

• MSM0021622410, plan (intention): Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur

Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures