Výpis publikací

BOCHNÍČEK, Zdeněk. An amateur video camera as a detector of infrared radiation. Physics Education. Bristol, United Kingdom: IOP Publishing, 2008, roč. 43, č. 1, s. 51-56. ISSN 0031-9120.

CAHA, Ondřej, Josef KUBĚNA, Alan KUBĚNA a Mojmír MEDUŇA. Kinetics of oxygen, vacancies and self-interstitials in silicon wafers. In Silicon 2008 - 11th Scientific and Business Conference. Rožnov p. Radhoštěm: TECON Scientific, s.r.o., 2008, s. 351--351. ISBN 978-80-254-3278-5.

MEDUŇA, Mojmír, Ondřej CAHA, Josef KUBĚNA a Alan KUBĚNA. Oxygen precipitation during two-stage annealing of Cz-Si. In Silicon 2008 - 11th Scientific and Business Conference. Rožnov p. Radhoštěm: TECON Scientific, s.r.o., 2008, s. 353. ISBN 978-80-254-3278-5.

CAHA, Ondřej, Josef KUBĚNA, Alan KUBĚNA, Mojmír MEDUŇA a Petr MIKULÍK. Study of oxygen precipitates in silicon using Bragg and Laue x-ray diffraction. In XTOP 2008 - 9th biennial conference on high-resolution x-ray diffraction and imaging. 2008.

CAHA, Ondřej. Study of oxygen precipitates in silicon using x-ray diffraction techniques. In Silicon 2008 - 11th Scientific and Business Conference. 2008. ISBN 978-80-254-3278-5.

BURSIKOVA, Vilma, Pavel STAHEL, Jaroslav SOBOTA, Jan GROSSMAN, Tomas FORT, Zdenek BOCHNICEK, Petr KLAPETEK, Jiri BURSIK a Vratislav PERINA. Study of thermal stability of Silicon, Oxygen and/or Nitrogen containing Diamon-like Carbon coatings. In 2nd conference on New Diamond and Nano Carbons 2008. 2008.

KUBĚNA, Josef, Alan KUBĚNA, Ondřej CAHA a Petr MIKULÍK. Development of oxide precipitates in silicon: calculation of the distribution function of the classical theory of nucleation by a nodal-points approximation. J. Phys. Condens. Matter. IOP Publishing Ltd, 2007, roč. 19, č. 49, s. 496202-496212. ISSN 0953-8984.

HOUSEROVÁ, Jana. Si-containing Laves phases. In Pracovní setkání fyzikálních chemiků a elektrochemiků /7./. 1. vyd. Brno: Masarykova univerzita, 2007, s. 65-66. ISBN 978-80-21042353.

DUŠEK, Jiří, Vilma BURŠÍKOVÁ, Jaroslav SOBOTA, Jiří BURŠÍK, Olga BLÁHOVÁ, Petr KLAPETEK, Rodica VLADOIU a Vladislav NAVRÁTIL. Study of Mechanical Properties of Metallic Surface Layers on Silicon Substrates. In NANO 07. 2007. ISBN 978-80-214-3460-8.

BURŠÍKOVÁ, Vilma, Lenka ZAJÍČKOVÁ, Pavel DVOŘÁK, Miroslav VALTR, Jiří BURŠÍK, Olga BLÁHOVÁ, Vratislav PEŘINA a Jan JANČA. Influence of Silicon, Oxygen and Nitrogen Upon the Properties of Plasma Deposited Amorphous Diamond-like Carbon Coatings. Journal of advanced oxidation technologies. Dundas, Ontario, Canada: Science & Technology Network, Inc., 2006, roč. 9, č. 2, s. 232-237, 5 s. ISSN 1203-8407.

ŠTOUDEK, Richard a Josef HUMLÍČEK. Infrared spectroscopy of oxygen interstitials and precipitates in nitrogen-doped silicon. Physica B condensed matter. Amsterdam: Elsevier Science, 2006, roč. 376-377, č. 6, s. 150-153. ISSN 0921-4526.

BURŠÍKOVÁ, Vilma, Petr SLÁDEK, Pavel SŤAHEL a Jiří BURŠÍK. Mechanical properties of thin silicon films deposited on glass and plastic substrates studied by depth sensing indentation technique. Journal of Non-Crystalline Solids. Nizozemsko: Elsevier Science B.V., 2006, roč. 352, 9-20, s. 1242-1245. ISSN 0022-3093.

ŠTOUDEK, Richard, Pavel KLANG, Alan KUBĚNA a Josef KUBĚNA. Nucleation and Precipitation of Interstitial Oxygen in Czochralski Silicon. In Proceedings of The Tenth Scientific and Business Conference SILICON 2006. Rožnov pod Radhoštěm, Česká republika: TECON Scientific, s.r.o., 2006, s. 283-284. ISBN 80-239-7781-4.

KLANG, Pavel, Václav HOLÝ, Josef KUBĚNA, Richard ŠTOUDEK a Jan ŠIK. X-ray diffuse scattering from defects in nitrogen-doped Czochralski grown silicon wafers. J. Phys. D: Appl. Phys. Velká Britanie: IOP Publishing Ltd, 2005, roč. 2005, č. 38, s. A105-A110, 6 s. ISSN 0022-3727.

ŠTOUDEK, Richard a Josef HUMLÍČEK. Infrared Absorption Spectroscopy of Oxygen Precipitates in Czochralski Silicon. In WDS'04 Proceedings of Contributed Papers. Praha, Česká republika: MATFYZPRESS, 2004, s. 475-479, 4 s. ISBN 80-86732-32-0.

ŠTOUDEK, Richard, Michal LORENC a Josef HUMLÍČEK. Infrared Absorption Spectroscopy of Oxygen Precipitates in Nitrogen-doped Czochralski Silicon. In Proceedings of The Ninth Scientific and Business Conference SILICON 2004. Rožnov pod Radhoštěm, Česká republika: TECON Scientific, s.r.o., 2004, s. 146-150.

MIKULÍK, Petr. Project of a clean room laboratory for silicon device technology at the Masaryk University. In Proceedings of International Conference Silicon-2004. Rožnov pod Radhoštěm: Karel Vojtěchovský, 2004, s. 54-55.

KLANG, Pavel, Václav HOLÝ, Richard ŠTOUDEK a Jan ŠIK. X-ray Diffuse Scattering from Defects in Nitrogen-doped Czochralski Grown Silicon Wafers. In Proceedings of The Ninth Scientific and Business Conference SILICON 2004. 2004. vyd. Rožnov pod Radhoštěm, Česká republika: TECON Scientific, s.r.o., 2004, s. 53.

FRANTA, Daniel, Ivan OHLÍDAL, Vilma BURŠÍKOVÁ a Lenka ZAJÍČKOVÁ. Optical properties of diamond-like carbon films containing SiOx. Diamond and Related Materials. Amsterdam: Elsevier, 2003, roč. 12, č. 9, s. 1532-1538. ISSN 0925-9635.

MIKULÍK, Petr, T. BAUMBACH, D. KORYTÁR, P. PERNOT, D. LÜBBERT, L. HELFEN a Ch. LANDESBERGER. Advanced X-ray diffraction imaging techniques for semiconductor wafer characterisation. Materials Structure. Praha: The Czech and Slovak Cryst. Assoc., 2002, roč. 9, č. 2, s. 87-88. ISSN 1211-5894.

ŠIK, Jan, Michal LORENC a Richard ŠTOUDEK. Nitrogen in Czochralski-grown silicon. In SILICON 2002, Rožnov pod Radhostěm, TECON Scientific, editor K. Vojtěchovský. Neuveden: Neuveden, 2002, s. 125-128.

OHLÍDAL, Ivan, Daniel FRANTA, Miloslav OHLÍDAL a Karel NAVRÁTIL. Optical characterization of nonabsorbing and weakly absorbing thin films with the wavelengths related to extrema in spectral reflectances. Applied Optics. USA: Optical Society of America, 2001, roč. 40, č. 31, s. 5711-5717. ISSN 0003-6935.

SŤAHEL, Pavel, Petr SLÁDEK a Pere ROCA I CABARROCAS. Fotovoltaická konverze - solární články vyrobené z křemíku. In Fyzika, životní prostředí, energie a škola. 1. vyd. Brno: Masarykova univerzita Brno, 1999.

ŠIK, Jan, Jaroslav HORA a Josef HUMLÍČEK. Optical functions of silicon at high temperatures. Journal of Applied Physics. USA: American institute of physics, 1998, roč. 1998, č. 11, s. 6291-6298. ISSN 0021-8979.