Výpis publikací

2010

1. Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties

   KLENOVSKÝ, Petr, Vlastimil KŘÁPEK, Dominik MUNZAR a Josef HUMLÍČEK. Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties. Applied Physics Letters. USA: American institute of physics, 2010, roč. 97, č. 203107, 3 s. ISSN 0003-6951.

   Podrobněji: https://is.muni.cz/publication/908032/cs