HUMLÍČEK, Josef, R. HENN and M. CARDONA. Far-infrared Ellipsometry of Depleted Surface Layer in Heavily Doped N-type GaAs. Appl. Phys. Lett. USA: Institute of Physics, 1996, 69(1996), No 17, p. 2581-2583. ISSN 0003-6951. |
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@article{197465, author = {Humlíček, Josef and Henn, R. and Cardona, M.}, article_location = {USA}, article_number = {17}, language = {eng}, issn = {0003-6951}, journal = {Appl. Phys. Lett.}, title = {Far-infrared Ellipsometry of Depleted Surface Layer in Heavily Doped N-type GaAs}, volume = {69(1996)}, year = {1996} }
TY - JOUR ID - 197465 AU - Humlíček, Josef - Henn, R. - Cardona, M. PY - 1996 TI - Far-infrared Ellipsometry of Depleted Surface Layer in Heavily Doped N-type GaAs JF - Appl. Phys. Lett. VL - 69(1996) IS - 17 SP - 2581 EP - 2581 PB - Institute of Physics SN - 00036951 ER -
HUMLÍČEK, Josef, R. HENN and M. CARDONA. Far-infrared Ellipsometry of Depleted Surface Layer in Heavily Doped N-type GaAs. \textit{Appl. Phys. Lett.}. USA: Institute of Physics, 1996, 69(1996), No~17, p.~2581-2583. ISSN~0003-6951.
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