J 2002

Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)

HESSE, Anke, Julian STANGL and Václav HOLÝ

Basic information

Original name

Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)

Authors

HESSE, Anke (276 Germany), Julian STANGL (40 Austria) and Václav HOLÝ (203 Czech Republic, guarantor)

Edition

Physical Review B, USA, The American Physical Society, 2002, 0163-1829

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

United States of America

Confidentiality degree

není předmětem státního či obchodního tajemství

Impact factor

Impact factor: 3.070 in 2001

RIV identification code

RIV/00216224:14310/02:00007674

Organization unit

Faculty of Science

UT WoS

000177972500079

Keywords in English

Effect of overgrowth on shape; composition; and strain of SiGe islands on Si(001)

Tags

Změněno: 12/2/2007 14:17, prof. RNDr. Václav Holý, CSc.

Abstract

V originále

Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)

Links

GA202/00/0354, research and development project
Name: Procesy samouspořádání rozhraní při epitaxním růstu polovodičových supermřížek
Investor: Czech Science Foundation, Self-organization processes on the interfaces during epitaxial growth of semiconductor superlattices
MSM 143100002, plan (intention)
Name: Fyzikální vlastnosti nových materiálů a vrstevnatých struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical properties of new materials and layered structures