KULDOVÁ, Karla, Vlastimil KŘÁPEK, Alice HOSPODKOVÁ, Jiří OSWALD, Jiří PANGRÁC, Karel MELICHAR, Eduard HULICIUS, Marek POTEMSKI and Josef HUMLÍČEK. 1.3 mum emission from InAs/GaAs quantum dots. physica status solidi (c). Weinheim: WILEY-VCH Verlag GmbH, 2006, vol. 3, No 11, p. 3811-3814. ISSN 1610-1642.
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Basic information
Original name 1.3 mum emission from InAs/GaAs quantum dots
Name in Czech Emise na 1.3 mikrometru z InAs/GaAs kvantových teček
Authors KULDOVÁ, Karla (203 Czech Republic), Vlastimil KŘÁPEK (203 Czech Republic, guarantor), Alice HOSPODKOVÁ (203 Czech Republic), Jiří OSWALD (203 Czech Republic), Jiří PANGRÁC (203 Czech Republic), Karel MELICHAR (203 Czech Republic), Eduard HULICIUS (203 Czech Republic), Marek POTEMSKI (250 France) and Josef HUMLÍČEK (203 Czech Republic).
Edition physica status solidi (c), Weinheim, WILEY-VCH Verlag GmbH, 2006, 1610-1642.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher Netherlands
Confidentiality degree is not subject to a state or trade secret
RIV identification code RIV/00216224:14310/06:00018456
Organization unit Faculty of Science
Keywords in English quantum dots; InAs/GaAs; magnetophotoluminescence
Tags InAs/GaAs, magnetophotoluminescence, quantum dots
Tags International impact, Reviewed
Changed by Changed by: prof. RNDr. Josef Humlíček, CSc., učo 307. Changed: 9/4/2010 15:48.
Abstract
We report here the results of our photoluminescence study of a series of single quantum dot layer structures containing InxGa1–xAs strain reducing layers with different In concentration (from 0 % to 29 %), prepared by low pressure metal organic vapour phase epitaxy. These structures display a strong red shift of photoluminescence maxima from 1.25 mum to 1.45 mum at 300 K with increased In content in the ternary layer. The origin of the observed transitions has been explained using magnetophotoluminescence measurements and photoluminescence measurements for different pumping intensities at low temperature. Optical transition energies were calculated using a simple single-band effective mass model with energydependent effective mass. Comparing the calculated and measured energies, we can determine the thickness of the wetting layer and the sizes of the dots.
Abstract (in Czech)
We report here the results of our photoluminescence study of a series of single quantum dot layer structures containing InxGa1–xAs strain reducing layers with different In concentration (from 0 % to 29 %), prepared by low pressure metal organic vapour phase epitaxy. These structures display a strong red shift of photoluminescence maxima from 1.25 mum to 1.45 mum at 300 K with increased In content in the ternary layer. The origin of the observed transitions has been explained using magnetophotoluminescence measurements and photoluminescence measurements for different pumping intensities at low temperature. Optical transition energies were calculated using a simple single-band effective mass model with energydependent effective mass. Comparing the calculated and measured energies, we can determine the thickness of the wetting layer and the sizes of the dots.
Links
GA202/06/0718, research and development projectName: Inženýrství kvantových teček
Investor: Czech Science Foundation
KJB101630601, research and development projectName: Morfologie kvantových teček a její vliv na elektronovou strukturu
Investor: Academy of Sciences of the Czech Republic
MSM0021622410, plan (intention)Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures
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