PřF:IC020 Silicon nanoelectronics

IC020 Silicon nanoelectronics: Toward manipulation of a few electrons, photons and ions

Faculty of Science
Autumn 2008

Extent and Intensity: 0/0. 2 credit(s) (from 1 credit increase by 1). Recommended Type of Completion: z (credit). Other types of completion: zk (examination), k (colloquium), graded credit.
Teacher(s): prof. Michiharu Tabe (lecturer)
Guaranteed by: prof. RNDr. Josef Humlíček, CSc.
Department of Condensed Matter Physics – Physics Section – Faculty of Science
Contact Person: prof. RNDr. Josef Humlíček, CSc.
Course Enrolment Limitations: The course is offered to students of any study field.
Course objectives: Physics of electron-tunneling and its related devices will be presented, as well as device fabrication processes in the field of Si technology. In particular, the comparative study of coherent and incoherent nature of electron tunneling will be presented as the basis of single-electron devices, i. e., resonant tunneling diodes with double barrier structures, tunneling via quantum dots, and so on. A number of important research topics related to Si single-electron devices will be presented, such as single-electron transfer, single-photon detection, and single-ion detection by the single-electron devices. A high-resolution surface potential measurement technology (Kelvin-probe force microscopy) will be also presented.
Language of instruction: English
Further Comments: The course can also be completed outside the examination period.
The course is taught only once.
The course is taught: in blocks.

The course is also listed under the following terms Autumn 2007.