SKÁCELOVÁ, Dana, Pavel SŤAHEL a Mirko ČERNÁK. Activation of silicon surface in atmospheric oxygen plasma. CHEMICKÉ LISTY. Praha: Česká společnost chemická, 2012, roč. 106, S, s. 1488-1490. ISSN 0009-2770. |
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@article{1094488, author = {Skácelová, Dana and Sťahel, Pavel and Černák, Mirko}, article_location = {Praha}, article_number = {S}, keywords = {DCSBD; Si wafer; activation; oxygen plasma}, language = {eng}, issn = {0009-2770}, journal = {CHEMICKÉ LISTY}, title = {Activation of silicon surface in atmospheric oxygen plasma}, volume = {106}, year = {2012} }
TY - JOUR ID - 1094488 AU - Skácelová, Dana - Sťahel, Pavel - Černák, Mirko PY - 2012 TI - Activation of silicon surface in atmospheric oxygen plasma JF - CHEMICKÉ LISTY VL - 106 IS - S SP - 1488-1490 EP - 1488-1490 PB - Česká společnost chemická SN - 00092770 KW - DCSBD KW - Si wafer KW - activation KW - oxygen plasma N2 - In this contribution, the surface modification of crystalline silicon surface in oxygen atmosphere was investigated. Moreover the effect of crystallographic orientation and surface pre-cleaning of silicon surface were studied. c-Si wafers (100) and (111) oriented were cleaned in isopropyl alcohol or etched in HF solution and afterwards treated in Diffuse Coplanar Surface Barrier Discharge. Wettability, changes of surface properties and ageing effect of plasma treated surface were studied by means of contact angle measurement. It was proved, that modification of c-Si surface in oxygen plasma improve the wettability independent on crystallographic orientation and initial cleaning process. ER -
SKÁCELOVÁ, Dana, Pavel SŤAHEL a Mirko ČERNÁK. Activation of silicon surface in atmospheric oxygen plasma. \textit{CHEMICKÉ LISTY}. Praha: Česká společnost chemická, 2012, roč.~106, S, s.~1488-1490. ISSN~0009-2770.
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