FALUB, Claudiu Valentin, Mojmír MEDUŇA, Daniel CHRASTINA, Fabio ISA, Anna MARZEGALLI, Thomas KREILIGER, Alfonso TABOADA, Giovanni ISELLA, Leo MIGLIO, Alex DOMMANN and Hans VON KAENEL. Perfect crystals grown from imperfect interfaces. Scientific Reports. London: Nature Publishing Group, 2013, vol. 3, Jul, p. "nestránkováno", 6 pp. ISSN 2045-2322. Available from: https://dx.doi.org/10.1038/srep02276.
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Basic information
Original name Perfect crystals grown from imperfect interfaces
Name in Czech Dokonalé krystaly rostlé z nedokonalých rozhraní
Authors FALUB, Claudiu Valentin (642 Romania), Mojmír MEDUŇA (203 Czech Republic, guarantor, belonging to the institution), Daniel CHRASTINA (826 United Kingdom of Great Britain and Northern Ireland), Fabio ISA (380 Italy), Anna MARZEGALLI (380 Italy), Thomas KREILIGER (756 Switzerland), Alfonso TABOADA (724 Spain), Giovanni ISELLA (380 Italy), Leo MIGLIO (380 Italy), Alex DOMMANN (756 Switzerland) and Hans VON KAENEL (756 Switzerland).
Edition Scientific Reports, London, Nature Publishing Group, 2013, 2045-2322.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher United Kingdom of Great Britain and Northern Ireland
Confidentiality degree is not subject to a state or trade secret
WWW URL
Impact factor Impact factor: 5.078
RIV identification code RIV/00216224:14740/13:00068896
Organization unit Central European Institute of Technology
Doi http://dx.doi.org/10.1038/srep02276
UT WoS 000322153800004
Keywords (in Czech) elektronické součástky; polovodiče; zobrazovací metody
Keywords in English electronic devices; semiconductors; imaging techniques
Tags rivok
Tags International impact, Reviewed
Changed by Changed by: Mgr. Mojmír Meduňa, Ph.D., učo 7898. Changed: 13/3/2018 10:46.
Abstract
We prove by scanning X-ray nanodiffraction that mismatched Ge crystals epitaxially grown on deeply patterned Si substrates evolve into perfect structures away from the heavily islocated interface.
Abstract (in Czech)
Pomocí skenovací rtg nanodifrakce dokazujeme, že mřížkově nepřízpůsobené Ge krystaly vyrostlé epitaxně na hluboce vzorkovaných Si substrátech se vyvinou v dokonalé struktury daleko od dislokačního rozhraní.
Links
CZ.1.07/2.4.00/17.0006, interní kód MUName: Research4Industry - Budování a rozvoj vědecko-výzkumné spolupráce s výzkumnými a průmyslovými partnery
Investor: Ministry of Education, Youth and Sports of the CR, 2.4 Partnership and networks
ED1.1.00/02.0068, research and development projectName: CEITEC - central european institute of technology
EE2.3.20.0027, research and development projectName: Posílení excelence vědeckých týmů v oblasti nano a mikrotechnologií
MSM0021622410, plan (intention)Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures
PrintDisplayed: 17/8/2024 16:07