2013
Lattice constants and optical response of pseudomorph Si-rich SiGe:B
CAHA, Ondřej; P. KOSTELNÍK; Jan ŠIK; Y.D. KIM; Josef HUMLÍČEK et. al.Basic information
Original name
Lattice constants and optical response of pseudomorph Si-rich SiGe:B
Name in Czech
Mřížkové parametry a optická odezva pseudomorfní slitiny SiGe:B
Authors
CAHA, Ondřej (203 Czech Republic, belonging to the institution); P. KOSTELNÍK (203 Czech Republic); Jan ŠIK (203 Czech Republic, belonging to the institution); Y.D. KIM (410 Republic of Korea) and Josef HUMLÍČEK (203 Czech Republic, guarantor, belonging to the institution)
Edition
Applied Physics Letters, USA, American institute of physics, 2013, 0003-6951
Other information
Language
English
Type of outcome
Article in a journal
Field of Study
10302 Condensed matter physics
Country of publisher
United States of America
Confidentiality degree
is not subject to a state or trade secret
Impact factor
Impact factor: 3.515
RIV identification code
RIV/00216224:14740/13:00065531
Organization unit
Central European Institute of Technology
UT WoS
000327818700048
Keywords in English
silicon; SiGe alloys; heavy doping
Tags
Tags
International impact, Reviewed
Changed: 8/2/2018 09:38, prof. RNDr. Josef Humlíček, CSc.
In the original language
Pseudomorph epitaxial films of Si1-xGex:B were grown on undoped (100) Si for x<0.026 and the B concentration of 1.3E20 cm-3. The in-plane and out-of-plane lattice constants were determined using the X-ray techniques for 004 symmetric and 224 asymmetric diffraction. The influence of B and Ge co-doping has been detected in reflectance and ellipsometric spectra from infrared to ultraviolet. Free-hole plasma and Fano-type resonances of Si phonons and localized 11B and 10B vibrations have been observed. The spectral shift of E1 electronic transitions has been quantified. We found a simple way to test the variations of Ge content using relative reflectance spectra.
In Czech
Pseudomorní epitaxní vrstvy Si1-xGex:B byly připraveny na nedopovaném (100) Si pro x<0.026 a koncentraci B 1.3E20 cm-3. Mřížkové konstanty v rovině vrstvy a kolmo na ni byly určeny pomocí symetrické rtg difrakce 004 a asymetrické difrakce 224. Vliv dopingu B a Ge byl detekován v reflexních a elipsometrických spektrech v oblasti IR-UV. Byla pozorována odezva plasmatu volných děr a Fanova rezonance fononů Si a lokalizovaných vibrací 11B a 10B. Spektrální posuv přechodů E1 byl kvantifikován. Našli jsme jednoduchou možnost testu změn obsahu Ge užitím spekter relativní reflektance.
Links
| MUNI/A/1047/2009, interní kód MU |
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| TA01010078, research and development project |
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