Laser desorption time-of-flight mass spectrometry of atomic 
switch memory Ge2Sb2Te5 bulk materials and its thin films

J 2014

Laser desorption time-of-flight mass spectrometry of atomic switch memory Ge2Sb2Te5 bulk materials and its thin films

HOUŠKA, Jan, Eladia Maria PEÑA-MÉNDEZ, Jakub KOLÁŘ, Jan PŘIKRYL, Martin PVLIŠTA et. al.

Základní údaje

Originální název

Laser desorption time-of-flight mass spectrometry of atomic switch memory Ge2Sb2Te5 bulk materials and its thin films

Autoři

HOUŠKA, Jan (203 Česká republika, domácí), Eladia Maria PEÑA-MÉNDEZ (724 Španělsko), Jakub KOLÁŘ (203 Česká republika), Jan PŘIKRYL (203 Česká republika), Martin PVLIŠTA (203 Česká republika), Miloslav FRUMAR (203 Česká republika), Tomáš WÁGNER (203 Česká republika) a Josef HAVEL (203 Česká republika, garant, domácí)

Vydání

Rapid Communications in Mass Spectrometry, 2014, 0951-4198

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10406 Analytical chemistry

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Impakt faktor

Impact factor: 2.253

Kód RIV

RIV/00216224:14310/14:00073479

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1002/rcm.6833

UT WoS

000332988600004

Klíčová slova anglicky

atomic switch memory thin films pulsed laser deposition laser desorption time of flight mass spectrometry clusters solid phase structural fragments phase change materials Ge2Sb2Te5 (GST) laser ablation

Štítky

AKR, atomic switch memory, Clusters, laser ablation, laser desorption, phase-change materials, pulsed laser deposition, rivok, solid phase structural fragments, thin films, TOF mass spectrometry

Změněno: 9. 4. 2015 16:08, Ing. Andrea Mikešková

Anotace

V originále

The report elucidates the stoichiometry of GemSbnTep clusters formed in plasma when bulk or nano-layers of GST material are ablated. The clusters stoichiometry were identified using isotopic envelope analysis. The singly negatively or positively charged clusters identified from the LDI of GST were Ge, Ge2, GeTe, Ge2Te, Ten (n=1–3), GeTe2, Ge2Te2, GeTe3, SbTe2, Sb2Te, GeSbTe2, Sb3Te and the low abundance ternary GeSbTe3, while the LDI of germanium telluride yielded GemTen + clusters (m=1–3, n=1–3). Several minor Ge-H clusters were also observed for pure germanium and for germanium telluride. Sbn clusters (n=1–3) and the formation of binary TeSb, TeSb2 and TeSb3 clusters were detected when Sb2Te3 was examined. The clusters were found to be fragments of the original structure.

Návaznosti

GA13-05082S, projekt VaV

Název: Analýza a aplikace plazmatických procesů pro přípravu tenkých vrstev amorfních chalkogenidů

Investor: Grantová agentura ČR, Analýza a aplikace plazmatických procesů pro přípravu tenkých vrstev amorfních chalkogenidů

Citovat

HOUŠKA, Jan, Eladia Maria PEÑA-MÉNDEZ, Jakub KOLÁŘ, Jan PŘIKRYL, Martin PVLIŠTA, Miloslav FRUMAR, Tomáš WÁGNER a Josef HAVEL. Laser desorption time-of-flight mass spectrometry of atomic switch memory Ge2Sb2Te5 bulk materials and its thin films. Rapid Communications in Mass Spectrometry. 2014, roč. 28, č. 7, s. 699-704. ISSN 0951-4198. Dostupné z: https://dx.doi.org/10.1002/rcm.6833.

@article{1163425,
   author = {Houška, Jan and PeñaandMéndez, Eladia Maria and Kolář, Jakub and Přikryl, Jan and Pvlišta, Martin and Frumar, Miloslav and Wágner, Tomáš and Havel, Josef},
   article_number = {7},
   doi = {http://dx.doi.org/10.1002/rcm.6833},
   keywords = {atomic switch memory thin films pulsed laser deposition laser desorption time of flight mass spectrometry clusters solid phase structural fragments phase change materials Ge2Sb2Te5 (GST) laser ablation},
   language = {eng},
   issn = {0951-4198},
   journal = {Rapid Communications in Mass Spectrometry},
   title = {Laser desorption time-of-flight mass spectrometry of atomic switch memory Ge2Sb2Te5 bulk materials and its thin films},
   volume = {28},
   year = {2014}
}

TY  - JOUR
ID  - 1163425
AU  - Houška, Jan - Peña-Méndez, Eladia Maria - Kolář, Jakub - Přikryl, Jan - Pvlišta, Martin - Frumar, Miloslav - Wágner, Tomáš - Havel, Josef
PY  - 2014
TI  - Laser desorption time-of-flight mass spectrometry of atomic switch memory Ge2Sb2Te5 bulk materials and its thin films
JF  - Rapid Communications in Mass Spectrometry
VL  - 28
IS  - 7
SP  - 699-704
EP  - 699-704
SN  - 09514198
KW  - atomic switch memory thin films pulsed laser deposition laser desorption time of flight mass spectrometry clusters solid phase structural fragments phase change materials Ge2Sb2Te5 (GST) laser ablation
N2  - The report elucidates the stoichiometry of GemSbnTep clusters formed in plasma when bulk or nano-layers of GST material are ablated. The clusters stoichiometry were identified using isotopic envelope analysis. The singly negatively or positively charged clusters identified from the LDI of GST were Ge, Ge2, GeTe, Ge2Te, Ten (n=1–3), GeTe2, Ge2Te2, GeTe3, SbTe2, Sb2Te, GeSbTe2, Sb3Te and the low abundance ternary GeSbTe3, while the LDI of germanium telluride yielded GemTen + clusters (m=1–3, n=1–3). Several minor Ge-H clusters were also observed for pure germanium and for germanium telluride. Sbn clusters (n=1–3) and the formation of binary TeSb, TeSb2 and TeSb3 clusters were detected when Sb2Te3 was examined. The clusters were found to be fragments of the original structure.
ER  -

HOUŠKA, Jan, Eladia Maria PEÑA-MÉNDEZ, Jakub KOLÁŘ, Jan PŘIKRYL, Martin PVLIŠTA, Miloslav FRUMAR, Tomáš WÁGNER a Josef HAVEL. Laser desorption time-of-flight mass spectrometry of atomic switch memory Ge2Sb2Te5 bulk materials and its thin films. \textit{Rapid Communications in Mass Spectrometry}. 2014, roč.~28, č.~7, s.~699-704. ISSN~0951-4198. Dostupné z: https://dx.doi.org/10.1002/rcm.6833.

Podrobný výpis o publikaci